In this paper, we are reporting the fabrication of memristor device (Ag/TiO2/Cu) using electrohydrodynamic inkjet printing technology. The titanium oxide (TiO2) active layer was deposited using electrohydrodynamic atomization technique. The metal electrodes were patterned by using electrohydrodynamic printing technique. The crystalline nature, surface morphology and optical properties of as deposited TiO2 films were characterized using X-ray diffraction (XRD), scanning electron microscope (SEM) and UV-visible spectroscopic analysis respectively. XRD and SEM studies revealed that the presence of anatase TiO2 with uniform deposition. The optical transmittance of the deposited TiO2 films was observed to be 87% in the visible region. The fabricated memristor device (Ag/TiO2/Cu) exhibits bipolar resistive switching behavior within the low operating voltage (± 0.7V). Our results ensure that the printed technology provides breakthrough solution in the electronic memory device fabrication. ► Electrohydrodynamic inkjet technique was used to fabricate memristor device. ► The active layer TiO2 presence in the form of anatase. ► The optical transmittance of the TiO2 films was 87% in the visible region. ► Uniform deposition of TiO2 thin film was achieved. ► The Ag/TiO2/Cu device exhibited a bipolar resistive switching behavior.