MoS2 quantum dots (QDs)‐based white‐light‐emitting diodes (QD‐WLEDs) are designed, fabricated, and demonstrated. The highly luminescent, histidine‐doped MoS2 QDs synthesized by microwave induced fragmentation of 2D MoS2 nanoflakes possess a wide distribution of available electronic states as inferred from the pronounced excitation‐wavelength‐dependent emission properties. Notably, the histidine‐doped MoS2 QDs show a very strong emission intensity, which exceeds seven times of magnitude larger than that of pristine MoS2 QDs. The strongly enhanced emission is mainly attributed to nitrogen acceptor bound excitons and passivation of defects by histidine‐doping, which can enhance the radiative recombination drastically. The enabled electroluminescence (EL) spectra of the QD‐WLEDs with the main peak around 500 nm are found to be consistent with the photoluminescence spectra of the histidine‐doped MoS2 QDs. The enhanced intensity of EL spectra with the current increase shows the stability of histidine‐doped MoS2 based QD‐WLEDs. The typical EL spectrum of the novel QD‐WLEDs has a Commission Internationale de l'Eclairage chromaticity coordinate of (0.30, 0.36) exhibiting an intrinsic broadband white‐light emission. The unprecedented and low‐toxicity QD‐WLEDs based on a single light‐emitting material can serve as an excellent alternative for using transition metal dichalcogenides QDs as next generation optoelectronic devices. A “single light‐emitting material,” “low‐toxicity,” and “economical fabrication process” white‐light‐emitting diode based on histidine‐doped MoS2 quantum dots is successfully designed, fabricated, and demonstrated. This work overcomes the low‐luminescence problem for traditional 2D transition metal dichalcogenides and achieves high performance white‐light‐emitting diodes with an intrinsic broadband white‐light electroluminescence and a Commission Internationale de l'Eclairage chromaticity coordinate of (0.30, 0.36).