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Tsai, Yi-Lin; Huang, Sheng-Kai; Huang, Huang-Hsiung; Yang, Shu-Mei; Liang, Kai-Ling; Kuo, Wei-Hung; Fang, Yen-Hsiang; Wu, Chih-I; Wang, Shou-Wei; Shih, Hsiang-Yun; Xu, Zhiyu; Cho, Minkyu; Shen, Shyh-Chiang; Lin, Chien-Chung
IEEE photonics journal, 12/2020, Volume: 12, Issue: 6Journal Article
We determined the optical and electrical characteristics of GaN-based, ultraviolet micro light emitting diodes (microLEDs). Such microLEDs are essential to next-generation high-resolution micro-displays. Square-shaped microLEDs of different sizes (side lengths: 5-50 μm) were designed. The peak emission wavelength of these devices shifted <0.15 nm during the current injection. The 50 μm device had a 3.8 times greater relative illumination intensity than did the 5 μm device, suggesting a degradation in quantum efficiency in small devices. Measurements of temperature-dependent reverse leakage current indicated (1) thermal activation from deep centers and (2) a high percentage of components with surface recombination current in the small devices.
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