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Yuan, G. D; Zhou, Y. B; Guo, C. S; Zhang, W. J; Tang, Y. B; Li, Y. Q; Chen, Z. H; He, Z. B; Zhang, X. J; Wang, P. F; Bello, I; Zhang, R. Q; Lee, C. S; Lee, S. T
ACS nano, 06/2010, Volume: 4, Issue: 6Journal Article
p-Type surface conductivity is a uniquely important property of hydrogen-terminated diamond surfaces. In this work, we report similar surface-dominated electrical properties in silicon nanowires (SiNWs). Significantly, we demonstrate tunable and reversible transition of p+−p−i−n−n+ conductance in nominally intrinsic SiNWs via changing surface conditions, in sharp contrast to the only p-type conduction observed on diamond surfaces. On the basis of Si band energies and the electrochemical potentials of the ambient (pH value)-determined adsorbed aqueous layer, we propose an electron-transfer-dominated surface doping model, which can satisfactorily explain both diamond and silicon surface conductivity. The totality of our observations suggests that nanomaterials can be described as a core−shell structure due to their large surface-to-volume ratio. Consequently, controlling the surface or shell in the core−shell model represents a universal way to tune the properties of nanostructures, such as via surface-transfer doping, and is crucial for the development of nanostructure-based devices.
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