Resolution Limits of Electron-Beam Lithography toward the Atomic Scale

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Resolution Limits of Electron-Beam Lithography toward the Atomic Scale

Manfrinato, Vitor R; Zhang, Lihua; Su, Dong; Duan, Huigao; Hobbs, Richard G; Stach, Eric A; Berggren, Karl K

Nano letters, 04/2013, Volume: 13, Issue: 4

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We investigated electron-beam lithography with an aberration-corrected scanning transmission electron microscope. We achieved 2 nm isolated feature size and 5 nm half-pitch in hydrogen silsesquioxane resist. We also analyzed the resolution limits of this technique by measuring the point-spread function at 200 keV. Furthermore, we measured the energy loss in the resist using electron-energy-loss spectroscopy.

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