Using scanning X-ray diffraction microscopy, we investigate the relationship between residual strains from crystal growth in CsPbBr3 thin-film crystals, their stability, and local photoluminescence (PL). We find that out-of-plane compressive strain that arises from cooldown from crystallization is detrimental to material stability under X-ray irradiation. We also find that the optical PL red-shifts as a result of the out-of-plane compressive strain. The sensitivity of the PL peak position to strain suggests possible applications such as stress-sensitive sensors. Mosaicity, the formation of small misorientations in neighboring crystalline domains we observe in some CsPbBr3 single crystals, indicates the significant variations in the crystal quality that can occur even in single-crystal halide perovskites. The nanodiffraction results suggest that reducing local strains is a necessary path to enhance the stability of perovskite optoelectronic materials and devices from light-emitting diodes to high-energy detectors.