E-resources
-
Chen, Guorui; Jiang, Lili; Wu, Shuang; Lyu, Bosai; Li, Hongyuan; Chittari, Bheema Lingam; Watanabe, Kenji; Taniguchi, Takashi; Shi, Zhiwen; Jung, Jeil; Zhang, Yuanbo; Wang, Feng
Nature physics, 03/2019, Volume: 15, Issue: 3Journal Article
The Mott insulator is a central concept in strongly correlated physics and manifests when the repulsive Coulomb interaction between electrons dominates over their kinetic energy1,2. Doping additional carriers into a Mott insulator can give rise to other correlated phenomena such as unusual magnetism and even high-temperature superconductivity2,3. A tunable Mott insulator, where the competition between the Coulomb interaction and the kinetic energy can be varied in situ, can provide an invaluable model system for the study of Mott physics. Here we report the possible realization of such a tunable Mott insulator in a trilayer graphene heterostructure with a moiré superlattice. The combination of the cubic energy dispersion in ABC-stacked trilayer graphene4–8 and the narrow electronic minibands induced by the moiré potential9–15 leads to the observation of insulating states at the predicted band fillings for the Mott insulator. Moreover, the insulating states in the heterostructure can be tuned: the bandgap can be modulated by a vertical electrical field, and at the same time the electron doping can be modified by a gate to fill the band from one insulating state to another. This opens up exciting opportunities to explore strongly correlated phenomena in two-dimensional moiré superlattice heterostructures.Report of the likely observation of a Mott insulator in trilayer graphene with a moiré potential. The Mott state can be tuned between different filling fractions via gating, which will enable the careful study of this paradigmatic many-body state.
Author
![loading ... loading ...](themes/default/img/ajax-loading.gif)
Shelf entry
Permalink
- URL:
Impact factor
Access to the JCR database is permitted only to users from Slovenia. Your current IP address is not on the list of IP addresses with access permission, and authentication with the relevant AAI accout is required.
Year | Impact factor | Edition | Category | Classification | ||||
---|---|---|---|---|---|---|---|---|
JCR | SNIP | JCR | SNIP | JCR | SNIP | JCR | SNIP |
Select the library membership card:
If the library membership card is not in the list,
add a new one.
DRS, in which the journal is indexed
Database name | Field | Year |
---|
Links to authors' personal bibliographies | Links to information on researchers in the SICRIS system |
---|
Source: Personal bibliographies
and: SICRIS
The material is available in full text. If you wish to order the material anyway, click the Continue button.