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Chang, Ren-Jie; Wang, Xiaochen; Wang, Shanshan; Sheng, Yuewen; Porter, Ben; Bhaskaran, Harish; Warner, Jamie H
Chemistry of materials, 08/2017, Volume: 29, Issue: 15Journal Article
We show how an oxide passivating layer on the Cu surface before the growth of h-BN by chemical vapor deposition (CVD) can lead to increased domain sizes from 1 to 20 μm by reducing the nucleation density from 106 to 103 mm–2. The h-BN domains within each Cu grain are well-oriented, indicating an epitaxial relationship between the h-BN crystals and the Cu growth substrates that leads to larger crystal domains within the film of ∼100 μm. Continuous films are grown and show a high degree of monolayer uniformity. This CVD approach removes the need for low pressures, electrochemical polishing, and expensive substrates for large-area continuous films of h-BN monolayers, which is beneficial for industrial applications that require scalable synthesis.
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