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Shen, Wen-Wei; Chen, Kuan-Neng
Nanoscale research letters, 01/2017, Volume: 12, Issue: 1Journal Article
3D integration with through-silicon via (TSV) is a promising candidate to perform system-level integration with smaller package size, higher interconnection density, and better performance. TSV fabrication is the key technology to permit communications between various strata of the 3D integration system. TSV fabrication steps, such as etching, isolation, metallization processes, and related failure modes, as well as other characterizations are discussed in this invited review paper.
