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  • Transition from Anomalous H...
    Liu, Z. H.; Zhang, Y. J.; Liu, G. D.; Ding, B.; Liu, E. K.; Jafri, Hasnain Mehdi; Hou, Z. P.; Wang, W. H.; Ma, X. Q.; Wu, G. H.

    Scientific reports, 03/2017, Volume: 7, Issue: 1
    Journal Article

    Abstract We report experimental observation of large anomalous Hall effect exhibited in non-collinear triangular antiferromagnet D0 19 -type Mn 3 Ga with coplanar spin structure at temperatures higher than 100 K. The value of anomalous Hall resistivity increases with increasing temperature, which reaches 1.25 μΩ · cm at a low field of ~300 Oe at room temperature. The corresponding room-temperature anomalous Hall conductivity is about 17 (Ω · cm) −1 . Most interestingly, as temperature falls below 100 K, a temperature-independent topological-like Hall effect was observed. The maximum peak value of topological Hall resistivity is about 0.255 μΩ · cm. The appearance of the topological Hall effect is attributed to the change of spin texture as a result of weak structural distortion from hexagonal to orthorhombic symmetry in Mn 3 Ga. Present study suggests that Mn 3 Ga shows promising possibility to be antiferromagnetic spintronics or topological Hall effect-based data storage devices.