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Trenutno NISTE avtorizirani za dostop do e-virov UL. Za polni dostop se PRIJAVITE.

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zadetkov: 1.227
41.
  • Simulation analysis of partial discharge in random wounding insulation systems in aeronautical conditions
    Van De Steen, C.; Abadie, C.; Belijar, G. 2022 IEEE 4th International Conference on Dielectrics (ICD), 2022-July-3
    Conference Proceeding

    This paper presents simulated results of Partial Discharge Inception Voltage (PDIV) for a semi-complex geometry. Reduction of CO 2 in aeronautical domain can be reached with various approaches, ...
Celotno besedilo
Dostopno za: UL
42.
  • Oncogénétique en oncopédiatrie Oncogénétique en oncopédiatrie
    Abadie, C.; Gauthier-Villars, M.; Sirvent, N. ... Archives de pédiatrie : organe officiel de la Société française de pédiatrie, August 2012, Letnik: 19, Številka: 8
    Journal Article
    Recenzirano

    Les prédispositions héréditaires aux cancers de l’enfant sont présentes chez environ 10 % des enfants atteints de tumeurs malignes. Ces prédispositions concernent aussi bien des tumeurs très rares ...
Celotno besedilo
Dostopno za: UL
43.
  • Global modelling of soil ca... Global modelling of soil carbonyl sulfide exchanges
    Abadie, Camille; Maignan, Fabienne; Remaud, Marine ... Biogeosciences, 05/2022, Letnik: 19, Številka: 9
    Journal Article
    Recenzirano
    Odprti dostop

    Carbonyl sulfide (COS) is an atmospheric trace gas of interest for C cycle research because COS uptake by continental vegetation is strongly related to terrestrial gross primary productivity (GPP), ...
Celotno besedilo
Dostopno za: UL
44.
Preverite dostopnost
45.
  • Development of waste tire m... Development of waste tire modified concrete
    Li, Guoqiang; Stubblefield, Michael A.; Garrick, Gregory ... Cement and concrete research, 12/2004, Letnik: 34, Številka: 12
    Journal Article
    Recenzirano

    In this study, waste tire modified concrete was investigated experimentally. Two types of waste tire configurations were evaluated. One was in the form of chips, or particles, and the other was in ...
Celotno besedilo
Dostopno za: UL
46.
  • Comparison of the Effects o... Comparison of the Effects of Various Peroxisome Proliferators on Peroxisomal Enzyme Activities, DNA Synthesis, and Apoptosis in Rat and Human Hepatocyte Cultures
    Goll, Valérie; Alexandre, Eliane; Viollon-Abadie, Catherine ... Toxicology and applied pharmacology, 10/1999, Letnik: 160, Številka: 1
    Journal Article
    Recenzirano

    Peroxisome proliferators (PPs) are a class of rodent nongenotoxic hepatocarcinogens that cause hepatocyte peroxisome proliferation, increased DNA synthesis, and decreased spontaneous apoptosis. We ...
Celotno besedilo
Dostopno za: UL
47.
Preverite dostopnost
48.
  • A foliar disease simulation... A foliar disease simulation model to assist the design of new control methods against black leaf streak disease of banana
    Landry, C.; Bonnot, F.; Ravigné, V. ... Ecological modelling, 09/2017, Letnik: 359
    Journal Article
    Recenzirano

    •We built a foliar disease mechanistic model to simulate BLSD on a banana plant.•The model couples perennial host growth and complex pathogen epidemic cycle.•We present the Bayesian inference of the ...
Celotno besedilo
Dostopno za: UL
49.
  • Developing Field Skid Resis... Developing Field Skid Resistance Prediction Procedure for Louisiana Pavements
    Subedi, Yogendra P.; Wu, Zhong; Abadie, Chris Transportation research record, 2016, Letnik: 2575, Številka: 1
    Journal Article
    Recenzirano

    Research shows that by improving pavement surface friction resistance, wet pavement crashes can be reduced or prevented. However, the current asphalt mixture design procedure does not directly ...
Celotno besedilo
Dostopno za: UL
50.
  • GaAs manufacturing processe... GaAs manufacturing processes conditions for micro- and nanoscale devices
    Joint, F.; Abadie, C.; Vigneron, P.B. ... Journal of manufacturing processes, 12/2020, Letnik: 60
    Journal Article
    Recenzirano
    Odprti dostop

    High aspect-ratio etchings are a key aspect of the fabrication of III–V semiconductor devices. The increasing demand for diverse geometries with various characteristic lengths (from the micro- to the ...
Celotno besedilo
Dostopno za: UL

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