The characteristics of focal plane arrays (FPAs) based on (quantum-well infrared photodetector) QWIP structures with 384 × 288 elements spaced at the intervals 25 μm are investigated. The difference ...in spectral and current–voltage characteristics is established for epitaxial QWIP wafers. The output signal is found to vary over the area of photosensitive elements with gradients in different directions. The photoelectric FPA parameters depend strongly on the temperature of the cooled assembly and the bias at the photosensitive element. The noise-equivalent temperature difference is 30 mK at the frame rate 120 Hz and the cooled assembly temperature 65 K.
The characteristics of focal plane arrays (FPAs) based on (quantum-well infrared photodetector) QWIP structures with 384 x 288 elements spaced at the intervals 25 microm are investigated. The ...difference in spectral and current-voltage characteristics is established for epitaxial QWIP wafers. The output signal is found to vary over the area of photosensitive elements with gradients in different directions. The photoelectric FPA parameters depend strongly on the temperature of the cooled assembly and the bias at the photosensitive element. The noise-equivalent temperature difference is 30 mK at the frame rate 120 Hz and the cooled assembly temperature 65 K.
Although phosphodiesterase type 5 inhibitors are the first-line treatment of ED, some patients remain unresponsive to any pharmacotherapy. To date, the use of stem cells is considered as a new ...treatment modality for erectile dysfunction. The validity of this assumption has been experimentally proved in preclinical and clinical studies. The main focus is on the stem cells derived from adipose tissue, due to advantages over other sources.
Results of development of MIC PDK for GaAs process with 1.0-μm geometry size are presented. The PDK was later used for development of IF amplifiers, microwave switches and IF transformers for ...frequency range up to 1.5 GHz.
The 0.8 mkm AlGaN based process is realized to create power transistors suitable for design of microwave amplifiers with working frequencies up to C-band. Newly developed 0.5 mkm- process is expected ...to extend technology applicability towards X-band RF-devices.
Results obtained by "Svetlana-Rost" JSC while developing full-cycle foundry service for Russian market, are viewed. Based on standard technologies with crucial dimension of 0.5 microns, examples of ...microwave devices and acoustic resonators realization are presented.
