Development of planar detectors with active edge Povoli, M.; Bagolini, A.; Boscardin, M. ...
Nuclear instruments & methods in physics research. Section A, Accelerators, spectrometers, detectors and associated equipment,
12/2011, Letnik:
658, Številka:
1
Journal Article
Recenzirano
We report on the first batch of planar active edge sensors fabricated at Fondazione Bruno Kessler (Trento, Italy) on the way to the development of full 3D detectors with active edges. The main design ...and technological aspects are reported, along with selected results from the electrical characterization of detectors and test structures.
In view of the LHC upgrade phases towards the High Luminosity LHC (HL-LHC), the ATLAS experiment plans to upgrade the Inner Detector with an all-silicon system. The n-on-p silicon technology is a ...promising candidate to achieve a large area instrumented with pixel sensors, since it is radiation hard and cost effective. The presentation describes the performance of novel n-in-p edgeless planar pixel sensors produced by FBK-CMM, making use of the active trench for the reduction of the dead area at the periphery of the device. After discussing the sensor technology, some feedback from preliminary results of the first beam test will be discussed.
THGEM based photon detector for Cherenkov imaging applications Alexeev, M.; Birsa, R.; Bradamante, F. ...
Nuclear instruments & methods in physics research. Section A, Accelerators, spectrometers, detectors and associated equipment,
05/2010, Letnik:
617, Številka:
1
Journal Article
Recenzirano
We are developing a single photon detector for Cherenkov imaging counters. This detector is based on the use of THGEM electron multipliers in a multilayer design. The major goals of our project are ...ion feedback suppression down to a few per cent, large gain, fast response, insensitivity to magnetic fields, and a large detector size.
We report about the project status and perspectives. In particular, we present a systematic study of the THGEM response as a function of geometrical parameters, production techniques and the gas mixture composition. The first figures obtained from measuring the response of a CsI coated THGEM to single photons are presented.
Abstract Chiroptera is the only mammalian order that has adapted to active flight, offering a unique platform to study ecomorphological adaptations. While bats exhibit a diverse diet, the focus of ...this study is on insectivorous bats, specifically four species: Myotis daubentonii , Nyctalus noctula , Plecotus austriacus and Rhinolophus ferrumequinum . It is important to note that despite sharing an insectivorous diet, these species occupy different ecological niches, perform distinct feeding strategies and explore varied habitats to capture prey. Using 2‐D geometric morphometrics, we analysed a sample of mandibles to identify differences in size and shape among these species. We also investigated ecogeographical variation within their overlapping distribution across continental Europe. Significant differences in both mandibular size and shape were found among the four species. Sexual dimorphism influenced only the mandibular shape of R. ferrumequinum . A latitudinal gradient in mandibular size was found solely in N. noctula , while longitude significantly explained shape variation in M. daubentonii . These findings suggest that even within the ecological guild of insectivorous bats, there exists a diverse range of morphological adaptations that allow these species to occupy distinct ecological niches.
Micropattern gaseous photon detectors for Cherenkov imaging counters Alexeev, M.; Birsa, R.; Bradamante, F. ...
Nuclear instruments & methods in physics research. Section A, Accelerators, spectrometers, detectors and associated equipment,
11/2010, Letnik:
623, Številka:
1
Journal Article
Recenzirano
We are developing a detector of single photons for application in Cherenkov imaging counters, based on the use of a multilayer architecture of THGEM electron multipliers coupled to a solid state CsI ...photocathode. The main goals of our project are ion feedback suppression down to a few per cent level, large gain, fast response, good time resolution, insensitivity to magnetic field and large detector size. We report about the project status and perspectives.
In a multi-electrode device, the motion of free charge carriers generated by ionizing radiation induces currents on all the electrodes surrounding the active region 1. The amount of charge induced in ...each sensitive electrode is a function of the device geometry, the transport parameters and the generation profile. Hence this charge sharing effect allows the signal from each sensitive electrode to provide information about the electrical characteristics of the device, as well as information on the location and the profile of each ionization track.
The effectiveness of such approach was recently demonstrated in Ion Beam Induced Charge (IBIC) experiments carried out using a 2MeV He microbeam scanning over a sub-100μm scale silicon device, where the ion strike location point was evaluated through a comparative analysis of the charge induced in two independent surface electrodes coupled to independent data acquisition systems 2.
In this report, we show that the Monte Carlo method 3 can be efficiently exploited to simulate this IBIC experiment and to model the experimental data, shedding light on the role played by carrier diffusion, electronic noise and ion beam spot size on the induction of charge in the sensitive electrodes. Moreover, the Monte Carlo method shows that information on the ion strike position can be obtained from the charge signals from the sensitive electrodes.
In view of the LHC upgrade for the high luminosity phase (HL-LHC), the ATLAS experiment is planning to replace the inner detector with an all-silicon system. The n-in-p bulk technology represents a ...valid solution for the modules of most of the layers, given the significant radiation hardness of this option and the reduced cost. The large area necessary to instrument the outer layers will demand to tile the sensors, a solution for which the inefficient region at the border of each sensor needs to be reduced to the minimum size. This paper reports on a joint R&D project by the ATLAS LPNHE Paris group and FBK Trento on a novel n-in-p edgeless planar pixel design, based on the deep-trench process available at FBK.
In view of the LHC upgrade phases towards HL-LHC, the ATLAS experiment plans to upgrade the inner detector with an all-silicon system. The n-on-p silicon technology is a promising candidate for the ...pixel upgrade thanks to its radiation hardness and cost effectiveness. The edgeless technology would allow for enlarging the area instrumented with pixel detectors. We report on the development of novel n-on-p edgeless planar pixel sensors fabricated at FBK (Trento, Italy), making use of the active edge concept for the reduction of the dead area at the periphery of the device. After discussing the sensor technology and fabrication process, we present device simulations (pre- and post-irradiation) performed for different sensor configurations. First preliminary results obtained with the test-structures of the production are shown.
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