Role of biotechnology in sustainable agriculture Prasifka, Jarrad R; Hellmich, Richard L; Weiss, Michael J
Integrated pest management : concepts, tactics, strategies and case studies / edited by Edward B. Radcliffe, William D. Hutchison, Rafael E. Cancelado,
2009
Publication
Commercial, genetically-modified (GM) maize was first planted in the United States (USA, 1996) and Canada (1997) but now is grown in 13 countries on a total of over 35 million hectares (>24% of area ...worldwide). The first GM maize plants produced a Cry protein derived from the soil bacterium Bacillus thuringiensis (Bt), which made them resistant to European corn borer and other lepidopteran maize pests. New GM maize hybrids not only have resistance to lepidopteran pests but some have resistance to coleopteran pests and tolerance to specific herbicides. Growers are attracted to the Bt maize hybrids for their convenience and because of yield protection, reduced need for chemical insecticides, and improved grain quality. Yet, most growers worldwide still rely on traditional integrated pest management (IPM) methods to control maize pests. They must weigh the appeal of buying insect protection “in the bag” against questions regarding economics, environmental safety, and insect resistance management (IRM). Traditional management of maize insects and the opportunities and challenges presented by GM maize are considered as they relate to current and future insect-resistant products. Four countries, two that currently have commercialize Bt maize (USA and Spain) and two that do not (China and Kenya), are highlighted. As with other insect management tactics (e.g., insecticide use or tillage), GM maize should not be considered inherently compatible or incompatible with IPM. Rather, the effect of GM insect-resistance on maize IPM likely depends on how the technology is developed and used.
A high performance 65 nm SOI CMOS technology is presented. Dual stress liner (DSL), embedded SiGe, and stress memorization techniques are utilized to enhance transistor speed. Advanced-low-K BEOL for ...this technology features 10 wiring levels with a novel K=2.75 film in selected levels. This film is a SiCOH-based dielectric optimized for stress to enable integration for enhanced performance. The resulting technology delivers pFET and nFET AC switching on-current of 735 muA/mum and 1259 muA/mum respectively, at an off-current of 200 nA/um (V dd =1.0 V), and 6% reduction in interconnect delay. Process yield is demonstrated on a SRAM cell with size of 0.65 mum 2
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