An external cavity quantum cascade laser based on Fabry-Pérot etalon design is demonstrated for the first time. The Fabry-Pérot reflector was adjusted to produce single mode emission across the ...whole gain region.
We achieve lower elevated temperature threshold current densities: 250Acm -2 (80°C) and 575Acm -2 (125°C) (2mm lasers) for increased strained layer Ga fraction of 0.58 with 714nm lasing in 1mm ...devices (all broad area uncoated facets).
We demonstrate the use of a novel InGaP quantum-dot (QD) saturable absorber (SA) to induce passively mode-locked (ML) operation of a Ti:sapphire laser. Pulses as short as 518 fs are obtained at 752 ...nm with an average output power of up to 190 mW for 2.3 W of absorbed pump power at 532 nm. The absorption recovery of the SA is characterized by two decay coefficients: a fast and a slow component having time constants of 0.4 and 300 ps, respectively. The saturation fluence of the InGaP QDs was measured to be 28 mu J / cm 2 , the initial low-signal absorption was 1.5%, where 1.15% was nonsaturable loss.
InP quantum dot 2mm long uncoated facet lasers with threshold current densities of 130Acm -2 and 250Acm -2 at 20° C and 80° C respectively are produced by reducing carrier population and ...recombination through strain engineering.
Discrete-mode quantum-cascade lasers have been developed in the InGaAs-AlAsSb-InP materials system. For an uncoated 10- mu m-wide ridge waveguide and 3000- mu m-long cavity, the laser had a threshold ...current density J rm th of 4.2 hbox kA times hbox cm - 2 ( I rm th = 1.5 Unknown character hbox A ) at 300 K with a slope efficiency of 80 mW/A. A stable single-mode emission near 3.3 mu m with a sidemode suppression ratio of nearly 25 dB was observed and a tuning coefficient of 0.22 nm/K was obtained in the temperature range of 253 Unknown character hbox K Unknown character T < 303 Unknown character hbox K .
Discrete-mode quantum-cascade lasers have been developed in the InGaAs-AlAsSb-InP materials system. For an uncoated 10-Formula Omittedm-wide ridge waveguide and 3000-Formula Omittedm-long cavity, the ...laser had a threshold current density Formula Omitted of 4.2 Formula Omitted Formula Omitted at 300 K with a slope efficiency of 80 mW/A. A stable single-mode emission near 3.3 Formula Omittedm with a sidemode suppression ratio of nearly 25 dB was observed and a tuning coefficient of 0.22 nm/K was obtained in the temperature range of Formula Omitted.
Using an electro-optic sampling technique, we study the interaction of ultra-short midinfrared pulses with the active medium of a quantum cascade laser emitting at an 11.7 km wavelength below and ...above the laser threshold. Gain clamping is observed above the lasing threshold and additional broadband resonant absorption is found at a low bias current.
InP/GaInP quantum dot laser structures exhibiting broad optical gain spectra suitable for mode-locking have been demonstrated. Two-section narrow ridge passive mode-locked lasers were fabricated from ...this material. Mode-locking conditions have been investigated for devices with different cavity lengths, with maximum frequency of 15.21 GHz.
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