Monolithic InP/GaInP quantum dot passively mode-locked lasers, designed using gain and absorption measurements, are realised for the first time, emitting at 740 nm with 12.5 GHz repetition frequency.
Quantum networks are essential for realising distributed quantum computation and quantum communication. Entangled photons are a key resource, with applications such as quantum key distribution, ...quantum relays, and quantum repeaters. All components integrated in a quantum network must be synchronised and therefore comply with a certain clock frequency. In quantum key distribution, the most mature technology, clock rates have reached and exceeded 1GHz. Here we show the first electrically pulsed sub-Poissonian entangled photon source compatible with existing fiber networks operating at this clock rate. The entangled LED is based on InAs/InP quantum dots emitting in the main telecom window, with a multi-photon probability of less than 10% per emission cycle and a maximum entanglement fidelity of 89%. We use this device to demonstrate GHz clocked distribution of entangled qubits over an installed fiber network between two points 4.6km apart.
Intra-cavity frequency-doubling in a beta-barium borate crystal has generated a total of 120 mW continuous-wave output power at 338 nm from a vertical-external-cavity surface-emitting laser based on ...the AlGaInP material system. The wavelength was tuned over 5 nm
InAs electron-avalanche photodiodes are shown to produce 3 dB-bandwidth of 3.5 GHz that is not limited by the avalanche gain. Highest gain bandwidth products of 580 and 430 GHz were measured at 77 K ...and room temperature respectively.
InP/GaInP quantum dots, self assembled during epitaxial growth, are incorporated into the gain structure of an optically-pumped semiconductor disk laser. Laser emission at 740 nm has been achieved in ...a single transverse mode.
An optically-pumped VECSEL based on AlGaInP produced >1W continuous-wave output power at 675 nm and wavelength tuning over 16 nm. Intra-cavity second-harmonic generation was achieved in beta-barium ...borate to produce 60 mW at 337 nm in two output beams.
We demonstrate a novel process for fabrication of GaAs-based single lateral mode buried heterostructure lasers using a single epitaxial overgrowth in which an n-doped InGaP layer is utilized for both ...electrical and optical confinement.
IEEE Journal of Quantum Electronics, Volume 42 (4), pp397-403
(2006) This paper describes the design, fabrication, and performance of
planar-geometry InGaAs-InP devices which were specifically ...developed for
single-photon detection at a wavelength of 1550 nm. General performance issues
such as dark count rate, single-photon detection efficiency, afterpulsing, and
jitter are described.
This paper describes the design, fabrication, and performance of planar-geometry InGaAs-InP devices which were specifically developed for single-photon detection at a wavelength of 1550 nm. General ...performance issues such as dark count rate, single-photon detection efficiency, afterpulsing, and jitter are described.
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