Research on 2D materials has recently become one of the hottest topics that has attracted broad interdisciplinary attention. 2D materials offer fascinating platforms for fundamental science and ...technological explorations at the nanometer scale and molecular level, and exhibit diverse potential applications for future advanced nano-photonics and electronics. The chemical vapor deposition (CVD) technique has shown great promise for producing high-quality 2D materials with superior electro-optical performance. However, it is difficult to synthesize continuous single-crystal 2D materials with large domain sizes and good uniformity due to the low vapor pressure of their precursors. It has been observed that the addition of selected synergistic additives to the CVD process under mild conditions can result in uniformly large-area and highly crystalline monolayer 2D materials with exceptional optical/electrical properties. Moreover, the 2D material-based devices chemically modified by synergistic additives can achieve superior performances compared to those previously reported. In this review, we compare several typical synergistic additive-mediated CVD growth processes of 2D materials, as well as their superior properties, and provide some perspectives and challenges for the future of this emerging research field.
This review summarizes significant advances in the use of typical synergistic additives in growth of 2D materials with chemical vapor deposition, and the corresponding performance improvement of field effect transistors and photodetectors.
Monolayer transition metal dichalcogenide heterojunctions, including vertical and lateral p–n junctions, have attracted considerable attention due to their potential applications in electronics and ...optoelectronics. Lattice-misfit strain in atomically abrupt lateral heterojunctions, such as WSe2–MoS2, offers a new band-engineering strategy for tailoring their electronic properties. However, this approach requires an understanding of the strain distribution and its effect on band alignment. Here, we study a WSe2–MoS2 lateral heterojunction using scanning tunnelling microscopy and image its moiré pattern to map the full two-dimensional strain tensor with high spatial resolution. Using scanning tunnelling spectroscopy, we measure both the strain and the band alignment of the WSe2–MoS2 lateral heterojunction. We find that the misfit strain induces type II to type I band alignment transformation. Scanning transmission electron microscopy reveals the dislocations at the interface that partially relieve the strain. Finally, we observe a distinctive electronic structure at the interface due to hetero-bonding.
Heterostructured photoconductors based on hybrid perovskites and 2D transition‐metal dichalcogenides are fabricated and characterized. Due to the superior properties of CH3NH3PbI3 and WS2, as well as ...the efficient interfacial charge transfer, such photoconductors show high performance with on/off ratio of ≈105 and responsivity of ≈17 A W−1. Furthermore, the response times of the heterostructured photoconductors are four orders of magnitude faster compared to the counterpart of a perovskite single layer.
Ultrathin two-dimensional nanosheets of layered transition metal dichalcogenides (TMDs) are fundamentally and technologically intriguing. In contrast to the graphene sheet, they are chemically ...versatile. Mono- or few-layered TMDs - obtained either through exfoliation of bulk materials or bottom-up syntheses - are direct-gap semiconductors whose bandgap energy, as well as carrier type (n- or p-type), varies between compounds depending on their composition, structure and dimensionality. In this Review, we describe how the tunable electronic structure of TMDs makes them attractive for a variety of applications. They have been investigated as chemically active electrocatalysts for hydrogen evolution and hydrosulfurization, as well as electrically active materials in opto-electronics. Their morphologies and properties are also useful for energy storage applications such as electrodes for Li-ion batteries and supercapacitors.
The band-edge optical response of transition metal dichalcogenides, an emerging class of atomically thin semiconductors, is dominated by tightly bound excitons localized at the corners of the ...Brillouin zone (valley excitons). A fundamental yet unknown property of valley excitons in these materials is the intrinsic homogeneous linewidth, which reflects irreversible quantum dissipation arising from system (exciton) and bath (vacuum and other quasiparticles) interactions and determines the timescale during which excitons can be coherently manipulated. Here we use optical two-dimensional Fourier transform spectroscopy to measure the exciton homogeneous linewidth in monolayer tungsten diselenide (WSe2). The homogeneous linewidth is found to be nearly two orders of magnitude narrower than the inhomogeneous width at low temperatures. We evaluate quantitatively the role of exciton-exciton and exciton-phonon interactions and population relaxation as linewidth broadening mechanisms. The key insights reported here—strong many-body effects and intrinsically rapid radiative recombination—are expected to be ubiquitous in atomically thin semiconductors.
Both high resolution and high precision are required to quantitatively determine the atomic structure of complex nanostructured materials. However, for conventional imaging methods in scanning ...transmission electron microscopy (STEM), atomic resolution with picometer precision cannot usually be achieved for weakly-scattering samples or radiation-sensitive materials, such as 2D materials. Here, we demonstrate low-dose, sub-angstrom resolution imaging with picometer precision using mixed-state electron ptychography. We show that correctly accounting for the partial coherence of the electron beam is a prerequisite for high-quality structural reconstructions due to the intrinsic partial coherence of the electron beam. The mixed-state reconstruction gains importance especially when simultaneously pursuing high resolution, high precision and large field-of-view imaging. Compared with conventional atomic-resolution STEM imaging techniques, the mixed-state ptychographic approach simultaneously provides a four-times-faster acquisition, with double the information limit at the same dose, or up to a fifty-fold reduction in dose at the same resolution.
The development of silicon semiconductor technology has produced breakthroughs in electronics-from the microprocessor in the late 1960s to early 1970s, to automation, computers and smartphones-by ...downscaling the physical size of devices and wires to the nanometre regime. Now, graphene and related two-dimensional (2D) materials offer prospects of unprecedented advances in device performance at the atomic limit, and a synergistic combination of 2D materials with silicon chips promises a heterogeneous platform to deliver massively enhanced potential based on silicon technology. Integration is achieved via three-dimensional monolithic construction of multifunctional high-rise 2D silicon chips, enabling enhanced performance by exploiting the vertical direction and the functional diversification of the silicon platform for applications in opto-electronics and sensing. Here we review the opportunities, progress and challenges of integrating atomically thin materials with silicon-based nanosystems, and also consider the prospects for computational and non-computational applications.
Large‐sized chemical vapor deposited graphene films configured as solution‐gated transistors can label‐freely and electrically detect DNA hybridization with single‐base specificity. The gate voltage ...which gives the minimum device conductance (Vg,min) is sensitive to the charge transfer between DNA molecules and graphene, and thus is used to detect the DNA hybridization. The DNA detection is attributed to the electronic n‐doping from DNA to graphene rather than the electrostatic gating effect or impurity screening effect.
Enriching the functionality of ferroelectric materials with visible-light sensitivity and multiaxial switching capability would open up new opportunities for their applications in advanced ...information storage with diverse signal manipulation functions. We report experimental observations of robust intralayer ferroelectricity in two-dimensional (2D) van der Waals layered α-In2Se3 ultrathin flakes at room temperature. Distinct from other 2D and conventional ferroelectrics, In2Se3 exhibits intrinsically intercorrelated out-of-plane and in-plane polarization, where the reversal of the out-of-plane polarization by a vertical electric field also induces the rotation of the in-plane polarization. On the basis of the in-plane switchable diode effect and the narrow bandgap (∼1.3 eV) of ferroelectric In2Se3, a prototypical nonvolatile memory device, which can be manipulated both by electric field and visible light illumination, is demonstrated for advancing data storage technologies.
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