MoTe2 is an exfoliable transition metal dichalcogenide (TMD) that crystallizes in three symmetries: the semiconducting trigonal-prismatic 2H- or α-phase, the semimetallic and monoclinic 1T′- or ...β-phase, and the semimetallic orthorhombic γ-structure. The 2H-phase displays a band gap of ∼1 eV making it appealing for flexible and transparent optoelectronics. The γ-phase is predicted to possess unique topological properties that might lead to topologically protected nondissipative transport channels. Recently, it was argued that it is possible to locally induce phase-transformations in TMDs, through chemical doping, local heating, or electric-field to achieve ohmic contacts or to induce useful functionalities such as electronic phase-change memory elements. The combination of semiconducting and topological elements based upon the same compound might produce a new generation of high performance, low dissipation optoelectronic elements. Here, we show that it is possible to engineer the phases of MoTe2 through W substitution by unveiling the phase-diagram of the Mo1–x W x Te2 solid solution, which displays a semiconducting to semimetallic transition as a function of x. We find that a small critical W concentration x c ∼ 8% stabilizes the γ-phase at room temperature. This suggests that crystals with x close to x c might be particularly susceptible to phase transformations induced by an external perturbation, for example, an electric field. Photoemission spectroscopy, indicates that the γ-phase possesses a Fermi surface akin to that of WTe2.
MoTe
is an exfoliable transition metal dichalcogenide (TMD) that crystallizes in three symmetries: the semiconducting trigonal-prismatic 2H- or α-phase, the semimetallic and monoclinic 1T
- or ...β-phase, and the semimetallic orthorhombic γ-structure. The 2H-phase displays a band gap of ∼1 eV making it appealing for flexible and transparent optoelectronics. The γ-phase is predicted to possess unique topological properties that might lead to topologically protected nondissipative transport channels. Recently, it was argued that it is possible to locally induce phase-transformations in TMDs, through chemical doping, local heating, or electric-field to achieve ohmic contacts or to induce useful functionalities such as electronic phase-change memory elements. The combination of semiconducting and topological elements based upon the same compound might produce a new generation of high performance, low dissipation optoelectronic elements. Here, we show that it is possible to engineer the phases of MoTe
through W substitution by unveiling the phase-diagram of the Mo
W
Te
solid solution, which displays a semiconducting to semimetallic transition as a function of x. We find that a small critical W concentration x
∼ 8% stabilizes the γ-phase at room temperature. This suggests that crystals with x close to x
might be particularly susceptible to phase transformations induced by an external perturbation, for example, an electric field. Photoemission spectroscopy, indicates that the γ-phase possesses a Fermi surface akin to that of WTe
.
The recent report of a high-yielding process with Back-Side Power Delivery (BSPD) using PowerVia, the benefits obtained on an Intel E-core implementation, and the imminent deployment of PowerVia in ...High- Volume Manufacturing (HVM), are driving a rapid expansion of R&D across the Si Industry to enable future deployments of this seminal innovation. One such example is the recent experimental demonstration of back-side contacts (BSCONs), which bring about performance and scaling benefits. In this paper, we will identify and discuss potential directions beyond PowerVia, and the key process advances required to enable them. Three key R&D thrusts will be discussed: (i) scaling of the BSPD, (ii) introduction of new functionality on the back-side interconnects stack beyond power delivery, and (iii) efficient device stacking.
PowerVia increases the efficiency of power delivery by adding back-side interconnects 1. It also improves performance by relaxing the minimum front-side interconnect pitch and by optimizing them for ...signaling. Research to further improve performance and density synergistically with PowerVia includes back-side device contacts and device stacking. In this paper, we present an experimental demonstration of a novel cell architecture with back-side device contacts and back side power delivery. Keywords: back-side power delivery, back-side contacts, BSCON.
MoTe sub(2) is an exfoliable transition metal dichalcogenide (TMD) that crystallizes in three symmetries: the semiconducting trigonal-prismatic 2H- or alpha -phase, the semimetallic and monoclinic 1T ...super(')- or beta -phase, and the semimetallic orthorhombic gamma -structure. The 2H-phase displays a band gap of similar to 1 eV making it appealing for flexible and transparent optoelectronics. The gamma -phase is predicted to possess unique topological properties that might lead to topologically protected nondissipative transport channels. Recently, it was argued that it is possible to locally induce phase-transformations in TMDs, through chemical doping, local heating, or electric-field to achieve ohmic contacts or to induce useful functionalities such as electronic phase-change memory elements. The combination of semiconducting and topological elements based upon the same compound might produce a new generation of high performance, low dissipation optoelectronic elements. Here, we show that it is possible to engineer the phases of MoTe sub(2) through W substitution by unveiling the phase-diagram of the Mo sub(1-x)W sub()e sub(2) solid solution, which displays a semiconducting to semimetallic transition as a function of x. We find that a small critical W concentration x sub(c) similar to 8% stabilizes the gamma -phase at room temperature. This suggests that crystals with x close to x sub(c) might be particularly susceptible to phase transformations induced by an external perturbation, for example, an electric field. Photoemission spectroscopy, indicates that the gamma -phase possesses a Fermi surface akin to that of WTe sub(2). Keywords: electron microscopy; phase-transformations; photoemission spectroscopy; Raman spectroscopy; Transition-metal-dichalcogenides; Weyl semimetals;
We demonstrate 3-D self-aligned stacked NMOS-on-PMOS multiple Si nanoribbon transistors with successful integration of vertically stacked dual source/drain EPI process and vertically stacked dual ...metal gate process. Both top NMOS and bottom PMOS show high on-state performance and superior short channel control. A functional CMOS inverter is also demonstrated with well-balanced voltage transfer characteristics. The 3-D self-aligned stacked CMOS nanoribbon transistor is demonstrated as a promising transistor architecture to continue Moore's law scaling.
MoTe\(_2\) is an exfoliable transition metal dichalcogenide (TMD) which crystallizes in three symmetries, the semiconducting trigonal-prismatic \(2H-\)phase, the semimetallic \(1T^{\prime}\) ...monoclinic phase, and the semimetallic orthorhombic \(T_d\) structure. The \(2H-\)phase displays a band gap of \(\sim 1\) eV making it appealing for flexible and transparent optoelectronics. The \(T_d-\)phase is predicted to possess unique topological properties which might lead to topologically protected non-dissipative transport channels. Recently, it was argued that it is possible to locally induce phase-transformations in TMDs, through chemical doping, local heating, or electric-field to achieve ohmic contacts or to induce useful functionalities such as electronic phase-change memory elements. The combination of semiconducting and topological elements based upon the same compound, might produce a new generation of high performance, low dissipation optoelectronic elements. Here, we show that it is possible to engineer the phases of MoTe\(_2\) through W substitution by unveiling the phase-diagram of the Mo\(_{1-x}\)W\(_x\)Te\(_2\) solid solution which displays a semiconducting to semimetallic transition as a function of \(x\). We find that only \(\sim 8\) \% of W stabilizes the \(T_d-\)phase at room temperature. Photoemission spectroscopy, indicates that this phase possesses a Fermi surface akin to that of WTe\(_2\).
"Ethnic Conflict in World Politics" by Ted Robert Gurr and Barbara Harff, "The Indigenous Voice in World Politics" by Franke Wilmer and "The New Resource Wars" by Al Gedicks are reviewed.
Modulation of weak interlayer interactions between quasi-two-dimensional atomic planes in the transition metal dichalcogenides (TMDCs) provides avenues for tuning their functional properties. Here we ...show that above-gap optical excitation in the TMDCs leads to an unexpected large-amplitude, ultrafast compressive force between the two-dimensional layers, as probed by in situ measurements of the atomic layer spacing at femtosecond time resolution. We show that this compressive response arises from a dynamic modulation of the interlayer van der Waals interaction and that this represents the dominant light-induced stress at low excitation densities. A simple analytic model predicts the magnitude and carrier density dependence of the measured strains. This work establishes a new method for dynamic, nonequilibrium tuning of correlation-driven dispersive interactions and of the optomechanical functionality of TMDC quasi-two-dimensional materials.
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