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1 2 3 4 5
zadetkov: 67
1.
  • Fish otolith mass asymmetry... Fish otolith mass asymmetry: morphometry and influence on acoustic functionality
    Lychakov, D.V.; Rebane, Y.T. Hearing research, 03/2005, Letnik: 201, Številka: 1
    Journal Article
    Recenzirano

    The role of the fish otolith mass asymmetry in acoustic functionality is studied. The saccular, lagenar and utricular otoliths are weighted in two species of the Black Sea rays, 15 species of the ...
Celotno besedilo
Dostopno za: UL
2.
  • Two modes of HVPE growth of... Two modes of HVPE growth of GaN and related macrodefects
    Voronenkov, V. V.; Bochkareva, N. I.; Gorbunov, R. I. ... Physica status solidi. C, March 2013, Letnik: 10, Številka: 3
    Journal Article
    Recenzirano
    Odprti dostop

    GaN films with thickness up to 3 mm were grown by halide vapour phase epitaxy method. Two growth modes were observed: the high temperature (HT) mode and the low temperature (LT) mode. Films grown in ...
Celotno besedilo
Dostopno za: UL

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3.
  • Otolith regularities Otolith regularities
    Lychakov, D.V.; Rebane, Y.T. Hearing research, 05/2000, Letnik: 143, Številka: 1
    Journal Article
    Recenzirano

    The masses and the area sizes of the otoliths for the utriculus, sacculus and lagena of 15 species of the Black Sea fish are analyzed. Morphometrical otolith regularities are derived and their ...
Celotno besedilo
Dostopno za: UL
4.
  • Fish otolith asymmetry: Mor... Fish otolith asymmetry: Morphometry and modeling
    Lychakov, D.V.; Rebane, Y.T.; Lombarte, A. ... Hearing research, 09/2006, Letnik: 219, Številka: 1
    Journal Article
    Recenzirano

    Mathematical modeling suggests that relatively large values of otolith mass asymmetry in fishes can alter acoustic functionality and may be responsible for abnormal fish behavior when subjected to ...
Celotno besedilo
Dostopno za: UL
5.
  • Saccular otolith mass asymm... Saccular otolith mass asymmetry in adult flatfishes
    Lychakov, D. V.; Rebane, Y. T.; Lombarte, A. ... Journal of fish biology, 06/2008, Letnik: 72, Številka: 10
    Journal Article
    Recenzirano
    Odprti dostop

    A dimensionless measure of otolith mass asymmetry, χ, was calculated as the difference between the masses of the right and left paired otoliths divided by average otolith mass. Saccular otolith mass ...
Celotno besedilo
Dostopno za: UL

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6.
  • Efficiency droop in GaN LED... Efficiency droop in GaN LEDs at high current densities: Tunneling leakage currents and incomplete lateral carrier localization in InGaN/GaN quantum wells
    Bochkareva, N. I.; Rebane, Y. T.; Shreter, Y. G. Semiconductors (Woodbury, N.Y.), 08/2014, Letnik: 48, Številka: 8
    Journal Article
    Recenzirano

    The phenomenon of the emission efficiency droop of InGaN/GaN quantum wells (QWs) in light-emitting diode p - n structures is studied. The influence exerted by two basic processes on the emission ...
Celotno besedilo
Dostopno za: UL
7.
  • Light scattering by disloca... Light scattering by dislocations in group-III nitrides
    Rebane, Y. T.; Gorbunov, R. I.; Shreter, Y. G. Physica status solidi. A, Applications and materials science, 12/2005, Letnik: 202, Številka: 15
    Journal Article
    Recenzirano

    Light scattering by dislocations in group‐III nitrides has been studied. The effects of dislocation strain field and hollow cores on light scattering have been investigated. It is found that the ...
Celotno besedilo
Dostopno za: UL
8.
  • Light Emitting Diode with C... Light Emitting Diode with Charge Asymmetric Resonance Tunneling
    Rebane, Y.T.; Shreter, Y.G.; Yavich, B.S. ... Physica status solidi. A, Applied research, July 2000, Letnik: 180, Številka: 1
    Journal Article
    Recenzirano

    We suggest a system of two wells connected with Charge Asymmetric Resonance Tunneling (CART) as a basic element of light emitting diode (LED) structure for semiconductors with different masses of ...
Celotno besedilo
Dostopno za: UL
9.
  • Stacking Faults as Quantum ... Stacking Faults as Quantum Wells for Excitons in Wurtzite GaN
    Rebane, Y. T.; Shreter, Y. G.; Albrecht, M. Physica status solidi. A, Applied research, November 1997, Letnik: 164, Številka: 1
    Journal Article

    A model of the exciton bound to stacking faults (SF) in GaN is suggested. It is shown that SFs are potential wells (depth ≈︂120 meV and width ≈︂10 Å) for electrons and potential barriers (height ≈︂60 ...
Celotno besedilo
Dostopno za: UL
10.
  • Topological Interaction of ... Topological Interaction of Shallow-Level Centers with Dislocations in Semiconductors
    Rebane, Y.T. physica status solidi (b), December 1998, Letnik: 210, Številka: 2
    Journal Article
    Recenzirano

    Topological interaction of shallow impurities with dislocations is studied. This problem is related with the violation of the topological structure of the crystal lattice by dislocations. The ...
Celotno besedilo
Dostopno za: UL
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zadetkov: 67

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