Silicon-on-insulator (SOI) technology is being investigated for monolithic pixel device fabrication. The SOI wafers by UNIBOND allow the silicon resistivity to be optimized separately for the ...electronics and detector parts. We have fabricated pixel detectors using fully depleted SOI (FD-SOI) technology provided by OKI Semiconductor Co. Ltd. The first pixel devices consisting of 32times32 matrix with 20 mum times 20 mum pixels were irradiated with 60 Co gamma's up to 0.60 MGy and with 70-MeV protons up to 9.3times10 60 Co p/cm 2 . The performance characterization was made on the electronics part and as a photon detector from the response to reset signals and to laser. The electronics operation was affected by radiation-induced charge accumulation in the oxide layers. Detailed evaluation of the characteristics changes in the transistors was separately carried out using transistor test structures to which a wider range of irradiation, from 0.12 kGy to 5.1 MGy, was made with 60 Co gamma's.
Development of SOI pixel process technology Arai, Y.; Miyoshi, T.; Unno, Y. ...
Nuclear instruments & methods in physics research. Section A, Accelerators, spectrometers, detectors and associated equipment,
04/2011, Letnik:
636, Številka:
1
Journal Article
Recenzirano
A silicon-on-insulator (SOI) process for pixelated radiation detectors is developed. It is based on a 0.2
μm CMOS fully depleted (FD-)SOI technology. The SOI wafer is composed of a thick, ...high-resistivity substrate for the sensing part and a thin Si layer for CMOS circuits. Two types of pixel detectors, one integration-type and the other counting-type, are developed and tested. We confirmed good sensitivity for light, charged particles and X-rays for these detectors.
For further improvement on the performance of the pixel detector, we have introduced a new process technique called buried p-well (BPW) to suppress back gate effect. We are also developing vertical (3D) integration technology to achieve much higher density.
Bonded silicon-on-insulator (SOI) wafers have the capability of realizing monolithic pixel devices, where the silicon resistivity is optimized separately for the electronics and detector parts. Using ...UNIBOND wafers, we are developing monolithic pixel devices fabricated with OKI Semiconductor 0.20
μm FD-SOI technology. A set of PMOS and NMOS transistors were irradiated with protons in order to investigate the total ionization dose effect in transistor operation. We evaluated also the devices with a back-gate control electrode added underneath the buried oxide layer. Primary radiation effect appears in transistor threshold shifts, which can be explained by charge traps in the oxide layers and charge states created at the silicon–oxide boundaries. We discuss the possibility of TCAD simulation for evaluation of the charge densities.
Developments of SOI monolithic pixel detectors Arai, Y.; Miyoshi, T.; Unno, Y. ...
Nuclear instruments & methods in physics research. Section A, Accelerators, spectrometers, detectors and associated equipment,
11/2010, Letnik:
623, Številka:
1
Journal Article
Recenzirano
A monolithic pixel detector with 0.2μm silicon-on-insulator (SOI) CMOS technology has been developed. It has both a thick high-resistivity sensor layer and thin LSI circuit layer on a single chip. ...Integration-type and counting-type pixel detectors are fabricated and tested with light and X-rays. The process is open to many researchers through Multi Project Wafer (MPW) runs operated by KEK. Further improvements of the fabrication technologies are also under investigation by using a buried p-well and 3D integration technologies.
Abstract Tuberous sclerosis complex (TSC) is a leading genetic cause of epilepsy. TSC-associated epilepsy generally begins during the first year of life, and is associated with neurodevelopmental and ...cognitive problems. Management is challenging and seizures tend to persist in a large proportion of patients despite pharmacological and surgical treatment. This report summarizes the clinical recommendations for the management of TSC-associated epilepsy made by a panel of European experts in March 2012. Current treatment options and outstanding questions are outlined.
Abstract Subependymal giant cell astrocytoma (SEGA) is a type of brain tumour that develops in 10–15% of individuals with tuberous sclerosis complex (TSC). SEGAs can be unilateral or bilateral, ...developing from benign subependymal nodules (hamartomas) located near the foramen of Monro. These are usually slow-growing, glialneuronal tumours that develop within the first 2 decades of life. Traditionally, the management of SEGA involved monitoring using periodic neuroimaging, and surgical resection of tumours that exhibited growth and/or caused clinical signs of intracranial hypertension. Recent clinical research has demonstrated that mammalian target of rapamycin (mTOR) inhibitors can induce partial regression of SEGA associated with TSC and so might provide an acceptable alternative to neurosurgery for these tumours. This report summarizes the clinical recommendations for the management of SEGA made by a panel of European experts in March 2012. Current treatment options and outstanding questions are outlined.
Management of Gaucher disease (GD) is challenging due to its wide genotypic and phenotypic variability and changing clinical manifestations due to effective treatment. Sixteen face‐to‐face meetings ...with experts were held in order to discuss daily clinical practice and identify controversies regarding the management of GD. With this information, a questionnaire with 93 recommendations for different clinical scenarios was designed, and a Delphi survey among 86 physicians with experience in GD was conducted. Consensus was reached on 73 out of the 93 items. Recommendations on follow‐up of adult and pediatric patients were in line with current guidelines, and underscored the importance of a patient‐tailored approach. For the follow‐up of stable patients receiving long‐term treatment, consensus was reached on the importance of multidisciplinary care that involves pediatricians, internal medicine, and primary care, specialized radiologists, orthopedic surgeons, and hematologists when required. Degree of pain, use of painkillers and antidepressants, and quality of life should be evaluated at every follow‐up visit or at least once per year. In general, a closer follow‐up was recommended for untreated patients or patients who underwent a treatment change (every 3 months during the first year) and during pregnancy. For pregnant patients, hemostasis and risk of hemorrhage should be assessed, but no consensus was reached for initiation of treatment in asymptomatic pregnant patients. Lastly, recommendations on how to adapt GD management during a COVID‐19 pandemic were collected. This expert consensus may help decision‐making during the management of GD in specific clinical scenarios.
Silicon-on-insulator (SOI) technology is being investigated for monolithic pixel device fabrication. The SOI wafers by UNIBOND allow the silicon resistivity to be optimized separately for the ...electronics and detector parts. We have fabricated pixel detectors using fully depleted SOI (FD-SOI) technology provided by OKI Semiconductor Co. Ltd. The first pixel devices consisting of 32times32 matrix with 20 mum times 20 mum pixels were irradiated with super(60)Co gammaE14s up to 0.60 MGy and with 70-MeV protons up to 9.3times10 super(60)Co p/cm super(2). The performance characterization was made on the electronics part and as a photon detector from the response to reset signals and to laser. The electronics operation was affected by radiation-induced charge accumulation in the oxide layers. Detailed evaluation of the characteristics changes in the transistors was separately carried out using transistor test structures to which a wider range of irradiation, from 0.12 kGy to 5.1 MGy, was made with super(60)Co gammaE14s.
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