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Trenutno NISTE avtorizirani za dostop do e-virov UL. Za polni dostop se PRIJAVITE.

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zadetkov: 335
1.
Celotno besedilo
Dostopno za: CMK, CTK, FMFMET, NUK

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2.
  • Challenges in developing a ... Challenges in developing a consensus definition of neonatal sepsis
    McGovern, Matthew; Giannoni, Eric; Kuester, Helmut ... Pediatric research, 07/2020, Letnik: 88, Številka: 1
    Journal Article
    Recenzirano
    Odprti dostop

    Sepsis remains a leading cause of morbidity and mortality in the neonatal population, and at present, there is no unified definition of neonatal sepsis. Existing consensus sepsis definitions within ...
Celotno besedilo
Dostopno za: UL

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3.
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Dostopno za: UL

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4.
  • Outcomes of interventions i... Outcomes of interventions in neonatal sepsis: A systematic review of qualitative research
    Taneri, Petek Eylul; Devane, Declan; Kirkham, Jamie ... International journal of gynaecology and obstetrics, 06/2024
    Journal Article
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    Abstract Background While a systematic review exists detailing neonatal sepsis outcomes from clinical trials, there remains an absence of a qualitative systematic review capturing the perspectives of ...
Celotno besedilo
Dostopno za: UL
5.
  • Selective etching of disloc... Selective etching of dislocations in GaN grown by low-pressure solution growth
    Knoke, I.Y.; Berwian, P.; Meissner, E. ... Journal of crystal growth, 10/2010, Letnik: 312, Številka: 20
    Journal Article
    Recenzirano

    This work presents an experimental study on the identification and quantification of different types of dislocations in GaN grown by low-pressure solution growth. A reliable defect selective etching ...
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Dostopno za: UL
6.
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Dostopno za: UL

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7.
  • Two modes of HVPE growth of... Two modes of HVPE growth of GaN and related macrodefects
    Voronenkov, V. V.; Bochkareva, N. I.; Gorbunov, R. I. ... Physica status solidi. C, March 2013, Letnik: 10, Številka: 3
    Journal Article
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    GaN films with thickness up to 3 mm were grown by halide vapour phase epitaxy method. Two growth modes were observed: the high temperature (HT) mode and the low temperature (LT) mode. Films grown in ...
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Dostopno za: UL

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8.
Celotno besedilo
9.
  • Low-temperature formation o... Low-temperature formation of local Al contacts to a-Si:H-passivated Si wafers
    Plagwitz, H.; Nerding, M.; Ott, N. ... Progress in photovoltaics, 01/2004, Letnik: 12, Številka: 1
    Journal Article
    Recenzirano

    We have passivated boron‐doped, low‐resistivity crystalline silicon wafers on both sides by a layer of intrinsic, amorphous silicon (a‐Si:H). Local aluminum contacts were subsequently evaporated ...
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Dostopno za: UL
10.
  • GWTC-3: Compact binary coal... GWTC-3: Compact binary coalescences observed by LIGO and virgo during the second part of the third observing run
    Adhikari, N.; Anand, C.; Ando, M. ... Physical review. X, 12/2023, Letnik: 13, Številka: 4
    Journal Article, Web Resource
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    A billion years ago, two black holes spiraled together, forming a new black hole. They produced gravitational waves that reached Earth on September 14, 2015, where they were measured during the first ...
Celotno besedilo
Dostopno za: CMK, CTK, FMFMET, NUK, UL
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zadetkov: 335

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