The results presented in this article relate to the study of the impact of gamma radiation on the breakdown voltage of gas-filled surge arrester manufactured by CITEL, Littelfuse and EPCOS at an ...operating voltage of 230 V. Radium was considered as a source of gamma radiation in this research. The stability of breakdown voltage as well as the reliability of gas-filled surge arresters of different manufacturers were investigated using different statistical methods. This gas component operation was based on processes that lead to electrical breakdown and discharge in gas. The breakdown voltage has a stochastic nature, and it is a subject of certain distribution. One thousand voltage measurements of breakdown voltage were carried out for each value of the voltage increase rate, from 1 V/s up to 10 V/s, with and without the presence of additional gamma radiation. The detailed statistical analysis of the obtained experimental data was performed for both cases for all three GFSA types. Moreover, the cumulative distribution functions of breakdown voltage were presented with the applied Weibull distribution fit. The coefficient of correlation as well as Pearson χ2 test showed the strength of the relationship between the experimental distribution functions and the Weibull distribution fits. The values of the Weibull distribution coefficients for all voltage increase rates and for all components were also analyzed with and without gamma radiation.
This paper gives insight on the WebSocket communication method in Internet of Things system, where the hardware part of the system is based on ESP32 microcontroller. Method of implementation is ...discussed and the reliability of the real-time data transfer in Wi-Fi networks is tested and compared with the long-polling method. Special circuit is designed with the goal to stress the hardware part of the system and the client-server communication link in order to enable proper comparison of data transfer methods. For the comprehensive testing of the real-time data ow, a web server application is designed and used to visualize received data. Impact of RSSI on transfer methods is discussed as well. Eciency of the WebSocket method is discussed and then compared to the long-polling method.
This study aimed to comprehensively understand the performance and degradation of both p- and n-channel vertical double diffused MOS (VDMOS) transistors under bias temperature stress. Conducted ...experimental investigations involved various stress conditions and annealing processes to analyze the impacts of BT stress on the formation of oxide trapped charge and interface traps, leading to threshold voltage shifts. Findings revealed meaningful threshold voltage shifts in both PMOS and NMOS devices due to stresses, and the subsequent annealing process was analyzed in detail. The study also examined the influence of stress history on self-heating behavior under real operating conditions. Additionally, the study elucidated the complex correlation between stress-induced degradation and device reliability. The insights contribute to optimizing the performance and permanence of VDMOS transistors in practical applications, advancing semiconductor technology. This study underscored the importance of considering stress-induced effects on device reliability and performance in the design and application of VDMOS transistors.
The world's perennial need for energy and microelectronic miniaturization brings with it a broad set of technological and scientific challenges. Materials characterized by precise microstructural ...architectures based on fractal analysis and ranging in size down to nano scale represent an important avenue for finding novel solutions. Deep materials structure hierarchies of this type open new possibilities in capacity according to the Heywang model, especially when extended by a fractals approach and intergranular relationships supported and recognized by their fractal nature. These developments are opening new frontiers in microelectronics miniaturization. They build on early fractal applications that were used as tools in miniaturization research and also provided application perspectives for diverse energy technologies. In other words, fractals, as a crucial concept of modern theoretical-experimental physics and materials sciences, are tightly linked to higher integration processes and microelectronics miniaturization. They also hold potential for meeting the energy exploitation challenge. In this research context, for the first time we experimentally and theoretically investigated the electrostatic field between the grains within fractal nature aspects. It is essentially a theoretical experiment based on samples of experimental microstructures imaged with SEM, as previously published in a number of other papers. We now take the research a step further by consolidating the experimental samples with respect to the predicted distribution of grains and pores within the sample mass.
We make an original contribution by opening the frame of scale sizes with respect to the technical processes of consolidation. This lets us predict the constitutive elements of the microstructures – approximately equidistant grains and pores. In this paper we define in a practical manner the final target elements for experimental consolidation of real samples. It is the main bridge between a designed microstructure and related characteristics – for example, fractal dimensions and final properties of next-generation fractal microelectronics.
In the course of the last few years, interest in the development of smart
cities and progress of smart buildings has increased significantly. This
development has been significantly increased due to ...the development of new
technologies, innovative functional materials, electronic components and
other products. At the same time, it is imperative to use those products
that contribute to the preservation of the environment, and above all to
energy saving. Thus, new technologies are becoming increasingly attractive,
such as the one based on OLED (Organic Light Emitting Diode) technology,
which is used in the production of mobile phones, tablet computers, other
devices, as well as light sources. Although this technology has been
generally known for more than half a century, commercial application of OLED
components was not possible due to insufficient efficiency of products based
on it. However, the continuous improvement of characteristics and efficiency
enabled their more significant application in the past few years. The aim of
this work is to provide adequate information about the possibilities of
applying some innovative technologies in the planning and development of
smart cities. Especially, becoming more familiar with the basic properties
and application possibilities of OLED devices can lead to the life quality
improvements of city spaces users.
The new frontiers open different directions within the higher and deeper knowledge structure using unemployed nano sizes domains. The BaTiO3 and other ceramic materials have fractal configuration ...nature based on three phenomena. First, ceramic grains have fractal shape looking as a contour in cross section or as a surface. Second, there is the so-called “negative space” made of pores and intergranular space. Third, there is fractal Brownian motion (fBm) within the material, during and after sintering, in the form of microparticle flow: ions, atoms, and electrons. Here, we took upon ourselves the task of extending Coble’s model, with already generalized Euclidean geometries, by fractal nature correction. These triple factors make the very peculiar microelectronic environment electro-static/dynamic combination. The stress is here set on inter-granular micro-capacity in function of higher energy harvesting and storage. Constructive fractal theory allows identifying micro-capacitors with fractal electrodes. The method is based on the iterative process of interpolation which is compatible with the grain model itself. Inter-granular permeability is taken as the fundamental thermodynamic parameter function of temperature and enthalpy (Gibbs free energy), which are very important for a structure-energy relation.
The possibility of using commercial p-channel power vertical double-diffused metal-oxide-semiconductor field-effect transistors (VDMOSFETs) as X-ray sensors is investigated in this case study. In ...this aspect, the dependence of sensitivity on both the gate voltage and the mean energy for three X-ray beams is examined. The eight gate voltages from 0 to 21 V are applied, and the dependence of the sensitivity on the gate voltage is well fitted using the proposed equation. Regarding X-ray energy, the sensitivity first increases and then decreases as a consequence of the behavior of the mass energy-absorption coefficients and is the largest for RQR8 beam. As the mass energy-absorption coefficients of SiO2 are not found in the literature, the mass energy-absorption coefficients of silicon are used. The behavior of irradiated transistors during annealing at room temperature without gate polarization is also considered.
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