Design of mm-Wave Slow-Wave-Coupled Coplanar Waveguides Margalef-Rovira, Marc; Lugo-Alvarez, Jose; Bautista, Alfredo ...
IEEE transactions on microwave theory and techniques,
12/2020, Letnik:
68, Številka:
12
Journal Article
Recenzirano
Odprti dostop
This article focuses on the design of high-performance coupled slow-wave coplanar waveguide (CS-CPW) in CMOS technologies for the millimeter-wave (mm-wave) frequency bands. First, the theory as well ...as the electrical model of the CS-CPW are presented. Next, the analytical approach for the calculation of the model parameters is discussed. Then, by using the developed model, two mm-wave backward directional 3-dB couplers are designed in a bipolar complementary metal-oxide-semiconductor (BiCMOS) 55-nm technology for 120- and 185-GHz operation, respectively. Simulation and experimental results demonstrate that the use of the CS-CPW concept leads to state-of-the-art performance, with a good agreement between the analytical model, electromagnetic simulations, and measurement results.
The impact of collector region design on large-signal performance of horizontal current bipolar transistor (HCBT) technology is investigated by calibrated time-domain load-pull measurements. Three ...representative high-performance devices of the same geometry but with different collector doping profiles, namely, uniform, n-well, and low-doped, are subjected to large-signal measurements wherein the radio frequency (RF) time-domain waveforms of current and voltage are measured to facilitate the determination of the maximum output power for each device. The extensive measurements outline the boundaries of the maximum collector current and voltage swings at RF determining linear operating area, which are a result of the physical phenomena in the high-current and high-voltage regimes, namely, the Kirk effect and impact ionization, respectively. While the highest-doped n-well HCBT provides the highest output power of 25.3 dBm at 1-dB gain compression, and the lowest-doped HCBT enables a wideband match at the collector, the HCBT with a uniform doping profile provides a tradeoff between the output power and bandwidth of the output match. The results show the versatility of HCBT technology as an alternative to CMOS and/or sillicon-germanium (SiGe) large-signal RF circuits for the front-ends (FEs) in the sub-6 GHz wireless communications range.
This paper presents design considerations and methodology for D-band transformer-based Class-AB gain-boosting power amplifiers (PAs) in three advanced silicon technologies: 28 nm bulk CMOS ...(complementary metal oxide semiconductor), 22 nm FD-SOI (fully-depleted silicon on insulator), and 130 nm SiGe BiCMOS (Silicon-germanium bipolar-CMOS). Firstly, the choice of processes and models together with de-embedding approaches are discussed and described. Then, a general design flow for a transformer-based matching network (TMN) is introduced to accelerate the design of multistage PAs. Further, two gain-boosting topologies are analyzed. The influence of capacitive gain-boosting on PA performance (maximum available power gain <inline-formula> <tex-math notation="LaTeX">G_{max} </tex-math></inline-formula>, saturation power <inline-formula> <tex-math notation="LaTeX">P_{sat} </tex-math></inline-formula>, drain efficiency DE and power-added efficiency PAE) is studied for different silicon technologies after properly sizing the PA transistors to reach an optimum load resistance <inline-formula> <tex-math notation="LaTeX">R_{opt} </tex-math></inline-formula>. The inductive gain-boosting PA is explored and compared with the capacitive gain-boosting one in SiGe BiCMOS to achieve an even higher <inline-formula> <tex-math notation="LaTeX">P_{sat} </tex-math></inline-formula> while maintaining a high <inline-formula> <tex-math notation="LaTeX">G_{max} </tex-math></inline-formula>. Finally, A D-band 4-stage capacitive gain-boosting PA is fabricated in a 28 nm bulk CMOS process as a reference to verify the design methodology and simulation results, and its detailed design considerations are described. This prototyped D-band PA achieved the state-of-the-art results: a 22.5 dB <inline-formula> <tex-math notation="LaTeX">G_{p} </tex-math></inline-formula>, 6.6 % PAE, 8 dBm <inline-formula> <tex-math notation="LaTeX">P_{sat} </tex-math></inline-formula> and 81.1 FoM with only 0.0265 mm 2 core area.
We developed a flexible printed circuit (FPC) RF interface InP-based high-bandwidth coherent driver modulator (CDM) for 128-Gbaud class operations. To increase the bandwidth of the CDM, an FPC RF ...interface was introduced to the CDM package, which significantly improved the roll-off frequency by about 40 GHz compared with a conventional package with a surface-mount-type RF interface. The FPC package has a 3-dB bandwidth of about 75 GHz and roll-off frequency above 110 GHz. These are the best characteristics among the CDM packages reported so far. By integrating a modulator with an electro-optic (EO) 3-dB bandwidth of >67 GHz and a driver IC with an electrical 3-dB bandwidth of >75 GHz in this package, the CDM had an EO 3-dB bandwidth of >72 GHz. This EO 3-dB bandwidth is sufficient for 128 Gbaud-class operations. Furthermore, we performed 128-Gbaud dual polarization 16QAM modulations and confirmed good back-to-back bit-error-rate characteristics.
The total-ionizing-dose response of third-generation SiGe HBTs was investigated at elevated temperatures (80 °C and 130 °C) and compared with the response at 30 °C. The devices show less damage to ...irradiation at higher temperatures. Annealing experiments and TCAD simulations are used to investigate the degradation mechanism. The reduced degradation in forward mode at elevated temperatures is caused by increased annealing of interface traps primarily due to diffusion and reactions of H 2 within the oxide/nitride EB spacer. The degradation is modest at all measured temperatures, allowing these devices to be suitable for radiation-rich environments where elevated temperatures are expected.
Summary
This paper presents the best candidate integrated technology for achieving low‐noise, high‐speed, and wide bandwidth transimpedance amplifiers in optical computing and communication systems. ...Different complementary metal oxide semiconductor (CMOS) technology sizes are employed in addition to high electron mobility transistor (HEMT), bipolar CMOS (BiCMOS), and gallium arsenide technologies‐based transimpedance amplifiers to achieve high‐speed capability with low noise. These different technologies are applied on two proposed models to test the performance parameters. Maximum output signal voltage, maximum RF power spectrum, received output power, maximum Q‐factor, and minimum bit error rate are the tradeoff parameters for two proposed models at high transmission bit rates up to 400 Gb/s. It is observed that 600‐nm CMOS technology has presented the best candidate to deal with high transmission bit rates because of its superior performances in either the first proposed model or the second proposed model compared with other technologies under study. Figure of merit is applied on two proposed models and previous works to show the high‐speed performance operation of transimpedance amplifiers in our proposed models. The signal is tested before and after transimpedance amplifiers in different technologies.
Different complementary metal oxide semiconductor (CMOS) technology sizes are employed in addition to high electron mobility transistor, bipolar CMOS, and gallium arsenide technologies‐based transimpedance amplifiers to achieve high‐speed capability with low noise. These different technologies are applied on two proposed models to test the performance parameters. Maximum output signal voltage, maximum RF power spectrum, received output power, maximum Q‐factor, and minimum bit error rate are the tradeoff parameters for two proposed models at high transmission bit rates up to 400 Gb/s.
A new ultra-compact millimeter-wave on-chip bandpass filter (BPF) is presented based on two spiral resonators and a defected ground structure (DGS). For investigating the working mechanism of the ...proposed BPF, an LC equivalent circuit is constructed, and then the corresponding transmission zeros (TZs) are calculated in order to make the filter be quickly optimized with the guidance of LC equivalent circuit. Finally, the BPF is fabricated using 0.13-lm SiGe BiCMOS technology for demonstration. The measured results show that the fabricated BPF has a center frequency at 70.65 GHz with a bandwidth of 29.3%. The chip area of the BPF, excluding testing pads, is only 0.0288 mm2.
In this letter, a transimpedance amplifier (TIA) is presented, which features a bandwidth (BW) of 97 GHz, 66-dB<inline-formula> <tex-math notation="LaTeX">\mathrm {{{\Omega }}} ...</tex-math></inline-formula> maximum transimpedance gain, and 6.3-pA/<inline-formula> <tex-math notation="LaTeX">\mathrm { {\sqrt {Hz}}} </tex-math></inline-formula> integrated noise current density, operating at up to 120 Gb/s and consuming only 145 mW. Reaching a higher BW at a noise performance comparable to the state of the art is the novelty of this work. It was achieved by combining a low-BW input stage, reducing the total noise, and a multistage postequalization. The gain peaking technique through cascading emitter follower stages is employed in a broadband TIA as a post equalizer. To the best of our knowledge, the presented design shows the best performance in terms of overall gain, BW, and noise for the lowest power consumption compared to state-of-the-art designs.
The design and experimental results of millimeter-wave bandpass filters (BPFs) implemented in 55-nm BiCMOS technology and operating around 120 GHz are presented in this article. Slightly modified ...coupled line filters' structures are used in the designs. It allows generating the transmission zero at the upper stopband, leading to the selectivity of enhanced filters. The coupled line structure is implemented in two technologies, microstrip coupled lines and coupled slow-wave (SW) coplanar waveguides (CS-CPWs). The latter shows more design flexibility, allowing to reach a better filtering performance than the microstrip filters, i.e., better in-band flatness and higher selectivity. Good agreement is achieved between simulation, modeling, and measurement results. Also, the overall length of the filter based on CS-CPWs is smaller as compared to the filters based on the microstrip lines, thanks to the SW propagation.
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