Spectral responses of all elements of a focal plane array (FPA) have been analyzed. Differences in the received spectral responses of adjacent elements have been revealed. Regularities of variation ...in the right boundary of the spectral sensitivity have been found. The obtained data can increase the accuracy of developed and manufactured FPAs.
The influence of parameters of the MOS hydride epitaxy on structural and electrophysical characteristics of InGaAs/InP heterostructures is studied experimentally. The chosen parameters are used to ...grow device structures and fabricate planar avalanche photodiodes based on them. The results of measuring of their photoelectrical properties suggest that the developed structures are suitable for fabrication of commercial planar avalanche photodiodes.
Experimental results of the investigation and analysis of structural properties of cadmium–zinc–tellurium (CZT) substrates intended for the cadmium–mercury–tellurium (MCT) epitaxy by the methods of ...X-ray diffraction, selective etching, and infrared (IR) microscopy are considered. A relation between the shape and the full width at half-maximum (FWHM) of the rocking curve with structural defects, which are present in the material, is demonstrated. Precipitates and inclusions of the second phase, which are present in the substrate material in the amount of 10
2
–10
4
cm
–2
, do not affect values of the FWHM of the rocking curve. Broadening of the rocking curve is caused by either high density of dislocations (>8 × 10
5
) or the cellular property of their distribution. Maps of the FWHM distribution of the rocking curve for determination of structural perfection throughout the entire areas of the samples allowing evaluation of the suitability of wafers for subsequent technological process have been made.
The results of investigation of planar photodiodes (PDs) in a focal plane array (FPA) based on a heteroepitaxial InGaAs/InP structure are reported. The FPA has a size of 320 × 256 elements with a ...pitch of 30 μm, which are hybridized with various ROIC readout circuits. It is demonstrated that the PD reverse bias should be no lower than 2 V in order to suppress the FPA intercoupling at the room temperature. It is found that the dark current may be reduced considerably by cooling the FPA to–20°С with a two-stage thermoelectric cooler. The best average room-temperature dark current over the FPA planar photodiodes is 0.22 pA at an optimum PD bias of–2.4 V.
The analysis of the current state of solid photoelectronics for thermal imaging and thermal direction-finding equipment of new generation is performed. The results of the latest development of ...photoelectronic modules for thermal imaging and thermal direction-finding in the spectral bands 1–3, 3–5 and 8‒12 μm, as well as for ultraviolet range are presented. The main physical and technological problems of the design of photoelectronic modules as well as production of photosensitive materials for them are considered. A forecast of the directions of development is presented.
Principles of an analytical system of physical design of avalanche heterophotodiodes with separate regions of absorption and multiplication (AHPD with SRAM) are presented. The system is based on ...analytical expressions for the field of the avalanche breakdown of the
p–n
heterostructure and the interband tunnel current in it. This current determines the minimum noise level in the AHPD with SRAM based on direct band semiconductors. The considered method strongly facilitates optimization of the doping levels of the heterostructure layers and their thicknesses. In addition, it gives significantly more pronounced physical content to the optimization process.
The absorption coefficient of HgCdTe structures grown by the methods of liquid-phase epitaxy (LPE) and metalorganic chemical vapor deposition (MOCVD) is studied and calculated. The experimental data ...are compared to a theoretical absorption spectrum model, which is based on the fundamental absorption effect and the general theory of direct interband optical transitions, as well as other empirical dependences. The Fermi level shift in the studied HgCdTe structures and the slope of experimental absorption characteristics are calculated.
A technique for measuring photoelectric parameters of focal plane arrays (FPAs) with time delay and integration (TDI) operation mode without optical-mechanical scanning is presented. A feature of the ...FPA is the presence of disconnectable high-pass filters in the input cells of the large-scale integration circuit (LSI), which makes it possible to subtract the inconclusive constant component of the signal. A blackbody (BB) with modulator is used as an optical signal source. The criterion of selection of the modulation frequency is the TDI period and the amplitude–frequency characteristics of the FPA. In order to perform correct measurements of signal values, parameters of a nonrecursive TDI filter are calculated. Values of the FPA noise are obtained by subtracting the periodic amplitude modulation. The dependence of background irradiances on the photodetector is calculated and the dependence of the FPA noise on the background temperature is constructed. The internal FPA noise is calculated and numerical values of measured parameters are presented.
The design of a 14-bit delta-sigma analog-to-digital converter (ADC) with pipelined readout is considered. Basic concepts of the design of array photodetectors of the infrared (IR) range with an ADC ...in the accumulating cell are analyzed. The presence of an ADC in the readout large-scale integrated circuit (LSIC) cell provides an opportunity to increase the accumulation time by more than an order of magnitude and improve the threshold characteristics. A method for optimization of the ADC area by using an LFSR counter operating in two modes (digital code generation and serial readout) is proposed.
SWIR ADP 320 × 256 FPAs based on
p
–
i
–
n
photodiodes in InGaAs heterostructures have been developed and investigated. The typical InGaAs/InP PIN heterostructures are formed by Metal Organic Vapor ...Phase Epitaxy (MOVPE) on
n
+
type InP substrates. The InGaAs/InP PIN photodiodes performance have been estimated by measuring current-voltage characteristics. APD arrays are designed using a mesa-passivated avalanche photodiode device array of
p
–
i
–
n
junctions in heterostructure with common absorption and multiplication regions. The optimal operating point for managing avalanche application depended on various factors has been started at 15 V bias and the multiplication coefficient was of 2–4.
