In this paper, we procure the idea of pentapartitioned neutrosophic Q-ideal of Q-algebra. Then, we formulate some definitions and results on it. Further, we furnish some suitable examples. Keywords: ...Pentapartitioned Neutrosophic Set; PN-Q-Algebra; PN-Q-Ideal; PN-Q-Sub-Algebra.
In this paper, we study the pairwise Pythagorean Neutrosophic (for shortly,Pairwise PN) bitopo-logical spaces (with T and F are dependent neutrosophic components). We also study the pairwise PN ...P-spaces and the conditions under which PN bitopological spaces become pairwise PN P-spaces are investigated. Keywords: PN bitopology, Pairwise PN P-spaces,PN Baire space.
Ab initio calculations of the PN potential and electric dipole moment in the X1Σ+ ground electronic state were performed at short bond lengths, r=0.2–0.8 Å, and semi-empirical analytical ...potential-energy and dipole-moment functions were constructed based on all available experimental and theoretical information. The analytical forms for the potential-energy functions include the Extended Morse Oscillator and the Extended Hulburt-Hirshfelder potential. The dipole-moment function of PN was presented by our irregular and rational functions previously used for CO. The potential-energy and dipole-moment model functions were fitted simultaneously to the experimental line positions and permanent dipoles at v=0-2, as well as to the ab initio data from our present and previous studies. With these new functions, the improved line list for the ground electronic state of 31P14N was calculated. We show that the new analytic representations of the potential and dipole moment functions help significantly reduce the numerical noise in the intensities of high overtones as well as the associated saturation at high wavenumbers leading to the so-called “overtone plateaus” in spectra of diatomic molecules (see Medvedev et al., J. Mol. Spectrosc., 330, 36 (2016)) and thus provide reliable transition intensities at very high transition frequencies. The 3-0 band is identified as vibrational anomaly, and rotational anomalies inside this and some other bands are found.
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•Ab initio calculations were performed at short bond lengths.•Semi-empirical analytical potential-energy and dipole-moment functions were constructed.•The line list and absorption spectrum were calculated.•The vibrational and rotational anomalies are identified.
This study innovated constructed an activated carbon-loaded nano-zero-valent iron (nZVI-C) enhanced membrane aerated biofilm reactor (MABR) coupled partial nitritation/anammox (PN/A) system for ...optimizing nitrogen and antibiotics removal. Results showed that nitrogen and antibiotic removal efficiencies of 88.45 ± 0.14% and 89.90 ± 3.07% were obtained by nZVI-C, respectively. nZVI-C hastened Nitrosomonas enrichment (relative abundance raised from 2.85% to 12.28%) by increasing tryptophan content in EPS. Furthermore, nZVI-C proliferated amo gene by 3.92 times and directly generated electrons, stimulating Ammonia monooxygenase (AMO) co-metabolism activity. Concurrently, via antibiotic resistance genes (ARGs) horizontal transfer, Nitrosomonas synergized with Arenimonas and Comamonadaceae for efficient antibiotic removal. Moreover, nZVI-C mitigated antibiotics inhibition of electron transfer by proliferating genes for PN and anammox electron production (hao, hdh) and utilization (amo, hzs, nir). That facilitated electron transfer and synergistic substrate conversion between ammonia oxidizing bacteria (AOB) and anaerobic ammonia oxidizing bacteria (AnAOB). Finally, the high nitrogen removal efficiency of the MABR-PN/A system was achieved.
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•Nitrogen and antibiotic removal efficiencies of 88.45% and 89% were finally achieved.•nZVI-C enhanced tryptophan content to promote Nitrosomonas enrichment in biofilm.•nZVI-C stimulated AMO activity and enhanced Nitrosomonas co-metabolism ability.•Antibiotic removal relied on AMO and antibiotic resistance genes horizontal transfer.•Proliferation of electron transfer genes improved nitrogen removal efficiencye
•A concept of AnMBR-PN/A process was proposed for mainstream treatment.•In-situ FA/FNA exposure eliminated Nitrospira while retained Nitosonomas community.••DO limitation prevented switch of the NOB ...community in the mainstream conditions.•The effluent TN of the mainstream PN/A system was lower than 10 mg-N/L.•Enhanced hydrodynamic shear force resulted in sludge settleability deterioration.
In this pilot-scale study, an innovative mainstream treatment process that couples the anaerobic membrane reactor (AnMBR) with a one-stage PN/A system was proposed for advancing the concept of carbon neutrality in the municipal wastewater treatment plant. This work demonstrates the start-up procedure of a pilot-scale one-stage PN/A system for mainstream treatment. The 255-day start-up of the one-stage PN/A system involved the cultivation of ammonium-oxidizing bacteria (AOB) from the activated sludge, suppression of nitrite-oxidizing bacteria (NOB), investigation of in-situ growth kinetics of anammox bacteria (AnAOB), and the 50-day operation of the pilot-scale AnMBR-PN/A process for natural mainstream treatment. It is verified in the pilot-scale system for the first time that the in-situ free ammonia (FA) and free nitrous acid (FNA) exposure could effectively eliminate the Nitrospira (the NOB genus) while retaining the Nitosonomas (the AOB genus) community in the suspended sludge. NOB community rebounding was not detected even at the mainstream conditions with low nitrogen concentrations (Influent ammonium concentration=38±6 mg-NH4+-N/L) by intermittent aeration to control the system dissolved oxygen (DO) below 0.5 mg/L. The results of the mainstream treatment showed that the average effluent total nitrogen (TN) in the coupled process was generally lower than 10 mg-N/L, which meets the discharge limits of most prefectures in Japan. The investigated results of the in-situ anammox bacteria (AnAOB) growth kinetics suggested that the promoted start-up strategy of taking advantage of the warm months with higher mainstream temperature to achieve the rapid in-situ growth of the AnAOB is applicable in the investigated regions. From the perspective of the removal performance of the TN and organic substance, the AnMBR-PN/A process has great potential as the layouts of the carbon-neutral mainstream wastewater treatment plants.
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The main focus of this paper is to introduce the notion of single valued pentapartitioned neutrosophic off set / over set / under set. Besides, we establish several operations on single valued ...pentapartitioned neutrosophic off sets / over sets / under sets. Besides, we furnish some suitable examples to validate the results established in this article. Further, we establish some interesting results on single valued pentapartitioned neutrosophic off set / over set / under set. Keywords: Neutrosophic Set; SV-PN-Set; SV-PN-off-set; SV-PN-over-set; SV-PN-under-set.
A millimeter-wave current-reuse voltage-controlled oscillator (VCO) features a single-turn multi-tap inductor and two separate differential-only switched-capacitor arrays to improve the power ...efficiency and phase noise (PN). Specifically, a single-branch complementary VCO topology, in conjunction with a multi-resonant Resistor-Inductor-Capacitor-Mutual inductance (RLCM) tank, allows sharing the bias current and reshaping the impulse-sensitivity-function. The latter is based on an area- efficient RLCM tank to concurrently generate two high quality- factor differential-mode resonances at the fundamental and 2 nd - harmonic oscillation frequencies. Fabricated in 65-nm CMOS technology, our VCO at 27.7 GHz shows a PN of −109.91-dBc/Hz at 1-MHz offset (after on-chip divider-by-2), while consuming just 3.3 mW at a 1.1-V supply. It corresponds to a Figure-of-Merit (FOM) of 187.6 dBc/Hz. The frequency tuning range is 15.3% (25.2 to 29.4 GHz) and the core area is 0.116 mm 2 .
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•The NiO/β-Ga2O3 HJDs with different β-Ga2O3 orientations have been fabricated and characterized.•The substrate orientation dependent band alignment of the HJDs were identified by the ...transmittance spectra and XPS measurements.•The substrate orientation dependent electrical properties of the HJDs agreed well with the band structure determined by XPS.
Due to the difficulty of p-type doping in β-Ga2O3, NiO/β-Ga2O3 heterojunction becomes a promising candidate for fabricating bipolar devices. In this work, we performed a comparative study on the band alignment and electrical properties of the NiO/β-Ga2O3 heterojunctions with different β-Ga2O3 orientations. NiO thin films were sputtered on three β-Ga2O3 substrates with (−201), (001) and (010) orientations and were subsequently fabricated into NiO/β-Ga2O3 heterojunction diodes. A type-Ⅱ band alignment between the NiO and β-Ga2O3 was identified by the transmittance spectra and X-ray photoelectron spectroscopy (XPS) measurements. The valence band offsets (VBOs) of the NiO/β-Ga2O3 heterojunctions on (−201), (001) and (010) substrates were determined to be (2.12 ± 0.06) eV, (2.44 ± 0.07) eV and (2.66 ± 0.07) eV, respectively, and their corresponding conduction band offsets (CBOs) were (1.22 ± 0.06) eV, (1.49 ± 0.07) eV and (1.86 ± 0.07) eV. In addition, the fabricated heterojunction diodes showed good rectification properties with different turn-on voltages, which was in good agreement with the XPS results. The revealed influence of substrate orientations on the properties in NiO/β-Ga2O3 heterojunctions were of great importance for the design and optimization of β-Ga2O3-based heterojunction devices.
Ultraviolet (UV) radiation has a variety of impacts including the health of humans, the production of crops, and the lifetime of buildings. Based on the photovoltaic effect, self-powered UV ...photodetectors can measure and monitor UV radiation without any power consumption. However, the current low photoelectric performance of these detectors has hindered their practical use. In our study, a super-high-performance self-powered UV photodetector based on a GaN/Sn:Ga
O
pn junction was generated by depositing a Sn-doped n-type Ga
O
thin film onto a p-type GaN thick film. The responsivity at 254 nm reached up to 3.05 A/W without a power supply and had a high UV/visible rejection ratio of R
/ R
= 5.9 × 10
and an ideal detectivity at 1.69 × 10
cm·Hz
·W
, which is well beyond the level of previous self-powered UV photodetectors. Moreover, our device also has a low dark current (1.8 × 10
A), a high I
/ I
ratio (∼10
), and a fast photoresponse time of 18 ms without bias. These outstanding performance results are attributed to the rapid separation of photogenerated electron-hole pairs driven by a high built-in electric field in the interface depletion region of the GaN/Sn:Ga
O
pn junction. Our results provide an improved and easy route to constructing high-performance self-powered UV photodetectors that can potentially replace traditional high-energy-consuming UV detection systems.
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