Xenon (Xe) flash lamps were applied to the annealing process of amorphous In–Ga–Zn–O (a-IGZO) semiconductor films at room temperature for different pulse repetition numbers, and the results were ...compared with the conventional annealing process. From the Hall measurement results, the a-IGZO films annealed using Xe flash lamps showed improvements in carrier mobilities similar to a-IGZO films annealed in a conventional vacuum furnace. The Xe flash lamp was also used in the annealing process in the fabrication of a-IGZO thin-film transistors (TFTs). The transfer characteristics of a-IGZO TFTs showed enhanced saturation field-effect mobilities, smaller subthreshold swing, threshold voltage shifts, and higher on–off ratios at higher pulse repetition numbers of the Xe flash lamp. These results showed that the Xe flash lamp has an annealing effect on amorphous oxide semiconductor electronic devices with higher productivities. KCI Citation Count: 3
Organic photovoltaic (OPV) devices have emerged as viable candidates for sunlight energy harvesting. However, a reliable technique for the rapid screening of materials and processes is a prerequisite ...towards faster development in this area. Here we review such a versatile evaluation technique for bulk heterojunction OPVs by the combination of time-resolved microwave conductivity (TRMC) and 10 µs white-light pulses from a Xe flash-lamp. This technique allows direct and efficient examination of p/n blend ratio, solvent choice, and annealing effects without requiring fabrication of the actual device. Based on the established correlation between the device performances and TRMC transients in the typical BHJ of P3HT and phenyl-C61-butyric acid methyl ester (PCBM), we extended the research to low bandgap polymers and demonstrated the feasibility of this evaluation. The TRMC technique can be used not only for the speedy process optimization of novel conjugated polymers, but also for rational engineering of novel molecular design.
PDF