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  • Park, Chanhoo; Choi, Minkwon; Kim, ChangHyun; Koo, Bonhyeok; Kweon, O Young; Park, Jinhyeung; Jung, Juyoung; Choi, Yunki; Lee, Kyoung-Woo; Ahn, Jeong Hoon; Ku, Ja-Hum

    2023 IEEE International Interconnect Technology Conference (IITC) and IEEE Materials for Advanced Metallization Conference (MAM)(IITC/MAM)
    Conference Proceeding

    This paper describes two advanced technologies recently adopted in back-end-of-line (BEOL) process for our logic products: self-aligned-universal-patterning (SAUP) and sacrificial oxide layer (SOL). Advantages of SAUP include improved extreme ultraviolet (EUV) throughput, reduced pinch-off type patterning defects, improved reliability, and lower power rail resistance. SOL is found to be an effective means to avoid dielectric damage and resulting RC degradation occurred by multiple etch processes.