Adjustable morphology and degree of reduction represent desirable properties of model oxide substrates for heterogeneous catalysis. We investigate these properties in CeO2 (ceria) thin films on Cu(111) using scanning tunneling microscopy and photoelectron spectroscopy. We identify growth mechanisms of ceria on Cu(111): formation of incomplete oxide interfacial layer and formation of three-dimensional ceria pyramids by stacking of monolayer-high islands. Using these mechanisms, we control the coverage, the number of open monolayers, and the step density of ceria thin films on Cu(111). Annealing in vacuum allows us to control besides the morphology also the degree of ceria surface reduction. We find a correlation between surface reduction and morphological stability in annealed ceria layers. Oriented and stoichiometric thin films of ceria on Cu(111) can be prepared at temperatures as low as 150 and 250 °C. Both the morphology and the surface reduction of these films readily change with increasing temperature, which must be accounted for in considering temperature-programmed experiments with ceria on Cu(111).