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Kim, Do Hyung; Lee, Kwang-Heum; Lee, Seung Hee; Kim, Junsung; Yang, Junghoon; Kim, Jingyu; Cho, Seong-In; Ji, Kwang Hwan; Hwang, Chi-Sun; Ko Park, Sang-Hee
IEEE electron device letters, 10/2022, Letnik: 43, Številka: 10Journal Article
This letter presents a thin-film transistor architecture, in which a "trench" is introduced between the source and drain electrode to enhance current flow. The top-gate top-contact oxide Trench thin-film transistor has a superior on-current per width of <inline-formula> <tex-math notation="LaTeX">27.7~\mu \text{A}/ \mu \text{m} </tex-math></inline-formula> at a drain voltage of 4.1 V. It also has a good subthreshold swing of 0.122 V/dec and turn-on voltage of −0.4 V. This study explores the operating mechanism of the high-current-driving Trench oxide thin-film transistor.
