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Nikonov, A. V.; Iakovleva, N. I.
Journal of communications technology & electronics, 03/2018, Letnik: 63, Številka: 3Journal Article
The influence of indirect transitions of Г-L and Г-Х types in the Brillouin zone on optical and electrophysical characteristics of heteroepitaxial layers of А 3 В 5 compounds is estimated by the example of ternary (InGaAs) and quaternary (InGaAsP) compounds. It has been found that consideration of indirect transitions lowers the refractive index of semiconductor compounds by up to 15% in a narrow wavelength range of 0.4—0.6 μm.
