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Borovkova, A. Yu; Grischina, T. N.; Matyuhina, E. S.
Journal of communications technology & electronics, 03/2018, Letnik: 63, Številka: 3Journal Article
The optimum etchant composition for precise removal of a thin high-doped silicon gettering layer is determined. It is found that the best-controlled etching is provided by the following composition: HNO 3 : HF: CH 3 COOH = 40: 1: 1. This composition etches the entire gettering layer away while preserving the required thickness of the contact layer, which prevents the space-charge region of the p–n junction from emerging at the back surface of the base of a photosensitive element. Thus, this etchant provides an opportunity to reduce the magnitude of dark currents and raise the percentage yield.
