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Iakovleva, N. I.; Nikonov, A. V.
Journal of communications technology & electronics, 03/2017, Letnik: 62, Številka: 3Journal Article
Values of the absorption coefficient of InGaAs structures grown by means of gaseous-phase epitaxy from metaloranic compounds have been studied and calculated. Experimental data have been compared to the theoretical model of the absorption spectrum based on the phenomenon of fundamental absorption and the general theory of direct interband optical transitions. The energy gap width has been graphically calculated from the slope of the experimental absorption characteristic.
