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Filatov, A. V.; Susov, E. V.; Karpov, V. V.; Zhilkin, V. A.; Ljubchenko, S. P.; Kusnezov, N. S.; Marushchenko, A. V.
Journal of communications technology & electronics, 03/2017, Letnik: 62, Številka: 3Journal Article
The time of independent operation t ind of indium antimonide photoresistors and photodiodes and photoresistors based on Cd х Hg 1– х Te ( х ~ 0.3) heterostructures deeply cooled with a Joule–Thomson throttling system is investigated. The largest independent operation time (taut ≥ 28 s) was obtained for Cd х Hg 1– х Te ( х ~ 0.3) photoresistors. Time t ind of the photoresistors and photodiodes is found to be related to the temperature of transition of the semiconductor materials from the impurity region to the intrinsic region. The possibility of increasing time t ind of the photodetectors by optimizing the requirements for the characteristics of InSb and Cd х Hg 1– х Te is discussed.
