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Voitsekhovskii, A. V.; Kulchitsky, N. A.; Nesmelov, S. N.; Dzyadukh, S. M.
Journal of communications technology & electronics, 09/2018, Letnik: 63, Številka: 9Journal Article
Features of the electrical properties of n ( p )-Hg 1– x Cd x Te ( x = 0.21–0.23) with Al 2 O 3 or SiO 2 /Si 3 N 4 dielectrics are considered. The HgCdTe films were grown by means of molecular beam epitaxy on GaAs(013) and Si(013) substrates. The possibility of determining the basic parameters of MIS structures based on n ( p )-Hg 1– x Cd x Te ( x = 0.21–0.23) with and without a varizonal layer from admittance measurements in a wide range of temperatures and frequencies is discussed.
