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Wu, W.; Yu, Z. H.; Xu, M.; Liu, X. L.; Zhao, J. G.; Liu, Z. Y.; Xia, W.; Li, Z. Y.; Zhou, C. Y.; Feng, J. J.; Xu, M.; Guo, Y. F.; Luo, J. L.
Applied physics. A, Materials science & processing, 03/2022, Letnik: 128, Številka: 3Journal Article
We fabricate CrP 4 single crystal under high pressure and high temperature at 5 GPa and 1373 K. The comprehensive physical properties including electronic transport, magnetic properties, specific heat, Hall, thermal Seebeck and thermal conductivity are reported here. The resistivity shows a good metallic conductivity and T 2.7 law relation in the low temperature, which indicates a weak correlation of electrons. It is interesting to note that CrP 4 shows large magnetoresistance (MR) of 500% under T = 2 K and B = 9 T, and the MR does not reach saturation until 9 T. The mechanism of large MR in CrP 4 is interpreted as the Fermi surface anisotropy. The Hall measurement shows that there is only one single type of carriers in CrP 4 with holes. CrP 4 exhibits paramagnetic behavior observed from the magnetic susceptibility measurement. Though CrP 4 exhibits high electrical conductivity, unexpected low thermal conductivity is observed at low temperature, which is due to the zigzag chain of CrP 6 octahedra along the c -axis. Low thermal conductivity is useful to design thermoelectric materials or devices by properly doping in CrP 4 .
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Dostop do baze podatkov JCR je dovoljen samo uporabnikom iz Slovenije. Vaš trenutni IP-naslov ni na seznamu dovoljenih za dostop, zato je potrebna avtentikacija z ustreznim računom AAI.
Leto | Faktor vpliva | Izdaja | Kategorija | Razvrstitev | ||||
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JCR | SNIP | JCR | SNIP | JCR | SNIP | JCR | SNIP |
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Vir: Osebne bibliografije
in: SICRIS
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