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Rhodes, D; Chenet, D. A; Janicek, B. E; Nyby, C; Lin, Y; Jin, W; Edelberg, D; Mannebach, E; Finney, N; Antony, A; Schiros, T; Klarr, T; Mazzoni, A; Chin, M; Chiu, Y.-c; Zheng, W; Zhang, Q. R; Ernst, F; Dadap, J. I; Tong, X; Ma, J; Lou, R; Wang, S; Qian, T; Ding, H; Osgood, R. M; Paley, D. W; Lindenberg, A. M; Huang, P. Y; Pasupathy, A. N; Dubey, M; Hone, J; Balicas, L
Nano letters, 03/2017, Letnik: 17, Številka: 3Journal Article
MoTe2 is an exfoliable transition metal dichalcogenide (TMD) that crystallizes in three symmetries: the semiconducting trigonal-prismatic 2H- or α-phase, the semimetallic and monoclinic 1T′- or β-phase, and the semimetallic orthorhombic γ-structure. The 2H-phase displays a band gap of ∼1 eV making it appealing for flexible and transparent optoelectronics. The γ-phase is predicted to possess unique topological properties that might lead to topologically protected nondissipative transport channels. Recently, it was argued that it is possible to locally induce phase-transformations in TMDs, through chemical doping, local heating, or electric-field to achieve ohmic contacts or to induce useful functionalities such as electronic phase-change memory elements. The combination of semiconducting and topological elements based upon the same compound might produce a new generation of high performance, low dissipation optoelectronic elements. Here, we show that it is possible to engineer the phases of MoTe2 through W substitution by unveiling the phase-diagram of the Mo1–x W x Te2 solid solution, which displays a semiconducting to semimetallic transition as a function of x. We find that a small critical W concentration x c ∼ 8% stabilizes the γ-phase at room temperature. This suggests that crystals with x close to x c might be particularly susceptible to phase transformations induced by an external perturbation, for example, an electric field. Photoemission spectroscopy, indicates that the γ-phase possesses a Fermi surface akin to that of WTe2.
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