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  • A 1280 × 1024 CMOS visible-...
    Borodin, D. V.; Osipov, Yu. V.; Vasil’ev, V. V.

    Journal of communications technology & electronics, 03/2017, Letnik: 62, Številka: 3
    Journal Article

    A photodetector array chip for detection of the optical signal in a wave range of 0.4–1.0 μm; conversion of the optical signal into the electric signal; and its extraction in the analog form to 1, 2, 4, 8, or 16 outputs has been designed, fabricated, and studied. The main parameters of this chip are the following: the charge capacity is up to 200000 electrons, the frame rate is higher than 600 Hz at the maximum resolution, and the integrated sensitivity is up to 1000 V/(lx s).