In this paper, we have studied the nonlinear performance and modeled the junction-less microring modulator (JL-MRM) designed on the standard silicon-on-insulator (SOI) platform. The JL-MRM utilizes the electrostatic doping effect to achieve the free carrier plasma dispersion effect in a silicon waveguide. A compact voltage-dependent steady-state model is analytically derived for JL-MRM. Using the compact steady-state model, closed-form expressions for the on–off extinction ratio (ER), optical modulation amplitude (OMA), and the quality of resonance (Q-factor) are also presented. We have also analyzed the nonlinear and chirp performance of JL-MRM. A small signal model for the MRM is also analyzed. The proposed device is simulated using commercially available TCAD and mode solver tools. Simulation results show that for a JL-MRM with 8.75 μm radius, the on–off ER and insertion loss (IL) are 20.5 dB and 1.98 dB, respectively. The estimated Q-value for MRM is approximately 11,630. From the proposed small signal model, the estimated 3-dB bandwidth, chirp parameter, and Q-value are found to be 28.29 GHz, -0.19, and 9979, respectively. From the nonlinear analysis, we also found that the proposed MRM for the input power level of 0 dBm offers approximately 82.15 dB.Hz1/2 and 109.87 dB.Hz2/3 of spurious free dynamic range (SFDR) for second harmonic and third harmonic distortions, respectively.