Abstract In this paper, a novel Resistive Random‐Access Memory (RRAM) read circuit has been designed and verified by simulation based on the RRAM model and parasitic capacitance of the circuit. Simulation results demonstrate the feasibility and effectiveness of the proposed circuit, with accurate reading of RRAM states and fast reading speed in the nanosecond range. The sense margin of the proposed circuit has improved as the array size increases, enhancing its application for advanced node RRAM array manufacture. Compared with conventional circuits, the proposed circuit achieved power consumption reduction of 6% and area reduction of 46.9 um 2 , resulting in a 97.5% reduction in area, providing an effective solution to address the cost and chip size challenges associated with RRAM industrialization.