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Pellegrini, S.; Warburton, R.E.; Tan, L.J.J.; Jo Shien Ng; Krysa, A.B.; Groom, K.; David, J.P.R.; Cova, S.; Robertson, M.J.; Buller, G.S.
IEEE journal of quantum electronics, 04/2006, Letnik: 42, Številka: 4Journal Article
This paper describes the design, fabrication, and performance of planar-geometry InGaAs-InP devices which were specifically developed for single-photon detection at a wavelength of 1550 nm. General performance issues such as dark count rate, single-photon detection efficiency, afterpulsing, and jitter are described.
