Measurement and analysis of the temperature dependence of bulk and surface leakage currents in InAs avalanche photodiodes have been performed between 77 K and 290 K. At unity gain, SU-8 passivated InAs photodiodes have low dark current densities of 100 mA/cm 2 at 290 K and 150 nA/cm 2 at 77 K. An avalanche multiplication factor of 25 was measured at 13 V and 19.5 V at 290 K and 77 K, respectively. The photodiodes exhibit dynamic resistance-area products, calculated at 0.1 V of 34 Ω-cm 2 at 290 K and 910 MΩ-cm 2 at 77 K. Our analysis showed that between the temperatures of 200 K and 290 K, the bulk leakage current is proportional to n i 2 whereas the surface leakage current is proportional to n i from 77 K to 290 K, where n i is the intrinsic carrier concentration. The activation energies deduced were 0.36 eV and 0.18 eV suggesting diffusion dominated bulk current and generation and recombination dominated surface current.