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On the microscopic origin of the kinetic step bunching instability on vicinal Si( [formula omitted])Mysliveček, J; Schelling, C; Schäffler, F; Springholz, G; Šmilauer, P; Krug, J; Voigtländer, B
Surface science, 12/2002, Letnik: 520, Številka: 3Journal Article
A scanning tunneling microscopy/atomic force microscopy study is presented of a kinetically driven growth instability, which leads to the formation of ripples during Si homoepitaxy on slightly vicinal Si(0 0 1) surfaces miscut in 1 1 0 direction. The instability is identified as step bunching, that occurs under step-flow growth conditions and vanishes both during low-temperature island growth and at high temperatures. We demonstrate, that the growth instability with the same characteristics is observed in two dimensional kinetic Monte Carlo simulation with included Si(0 0 1)-like diffusion anisotropy. The instability is mainly caused by the interplay between diffusion anisotropy and the attachment/detachment kinetics at the different step types on Si(0 0 1) surface. This new instability mechanism does not require any additional step edge barriers to diffusion of adatoms. In addition, the evolution of ripple height and periodicity was analyzed experimentally as a function of layer thickness. A lateral “ripple-zipper” mechanism is proposed for the coarsening of the ripples.
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