Organic field-effect transistors fabricated by solution process using TMTSF-TCNQ complex crystals grown at various temperatures

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Organic field-effect transistors fabricated by solution process using TMTSF-TCNQ complex crystals grown at various temperatures

Nawata, Takuya; Yamakado, Hideo; Uno, K.; Tanaka, Ichiro

Physica status solidi. C, November 2013, Letnik: 10, Številka: 11

Journal Article

Field‐effect transistors (FETs) based on crystals of tetramethyltetraselenafulvalene (TMTSF)‐tetracyanoquino‐dimethane (TCNQ) complex were fabricated by solution process. TMTSF‐TCNQ crystals grown at low (2 °C) and high (40 °C) temperatures were different in their shape, color, transparency, and crystal structure. Channel polarity of the fabricated FETs was found to be dependent on the growth temperature of the complex crystals. Namely, the FETs with the high‐ and low‐temperature grown crystals showed p‐ and n‐type characteristics, respectively. Furthermore, ambipolar FET characteristics were obtained when room‐temperature grown crystals were used. (© 2013 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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Nawata, Takuya | Yamakado, Hideo | Uno, K. | Tanaka, Ichiro

Dostop do baze podatkov JCR je dovoljen samo uporabnikom iz Slovenije. Vaš trenutni IP-naslov ni na seznamu dovoljenih za dostop, zato je potrebna avtentikacija z ustreznim računom AAI.

Leto	Faktor vpliva		Izdaja		Kategorija		Razvrstitev
Leto	JCR	SNIP	JCR	SNIP	JCR	SNIP	JCR	SNIP

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