Improving electrical and optical properties is important in manufacturing high‐efficiency solar cells. Previous studies focused on individual gettering and texturing methods to improve solar cell material quality and reduce reflection loss, respectively. This study presents a novel method called saw damage gettering with texturing that effectively combines both methods for multicrystalline silicon (mc‐Si) wafers manufactured using the diamond wire sawing (DWS) method. Although mc‐Si is not the Si material currently used in photovoltaic products, the applicability of this method using the mc‐Si wafers as it contains all grain orientations is demonstrated. It utilizes saw damage sites on the wafer surfaces for gettering metal impurities during annealing. Additionally, it can crystallize amorphous silicon on wafer surfaces generated during the sawing process to allow conventional acid‐based wet texturing. This texturing method and annealing for 10 min allow for the removal of metal impurities and effectively forms a textured DWS Si wafer. The results show that the open‐circuit voltage (ΔVoc = +29 mV), short‐circuit current density (ΔJsc = +2.5 mA cm−2), and efficiency (Δη = +2.1%) improved in the p‐type passivated emitter and rear cells (p‐PERC) manufactured using this novel method, as compared to those in the reference solar cells. The novel method developed in this study, i.e., SDGT, combined both gettering and texturing methods to improve the Si wafer‐based solar cell production efficiency. The results show that the open‐circuit voltage (+29 mV), short‐circuit current density (+2.5 mA cm−2), efficiency (+2.1%) improved and reduction in Fe concentration compared with that of the reference solar cell.