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Zhang, Lei; Zhou, Yuanjun; Guo, Lu; Zhao, Weiwei; Barnes, Anna; Zhang, Hai-Tian; Eaton, Craig; Zheng, Yuanxia; Brahlek, Matthew; Haneef, Hamna F; Podraza, Nikolas J; Chan, Moses H W; Gopalan, Venkatraman; Rabe, Karin M; Engel-Herbert, Roman
Nature materials, 02/2016, Letnik: 15, Številka: 2Journal Article
The fundamental challenge for designing transparent conductors used in photovoltaics, displays and solid-state lighting is the ideal combination of high optical transparency and high electrical conductivity. Satisfying these competing demands is commonly achieved by increasing carrier concentration in a wide-bandgap semiconductor with low effective carrier mass through heavy doping, as in the case of tin-doped indium oxide (ITO). Here, an alternative design strategy for identifying high-conductivity, high-transparency metals is proposed, which relies on strong electron-electron interactions resulting in an enhancement in the carrier effective mass. This approach is experimentally verified using the correlated metals SrVO3 and CaVO3, which, despite their high carrier concentration (>2.2 × 10(22) cm(-3)), have low screened plasma energies (<1.33 eV), and demonstrate excellent performance when benchmarked against ITO. A method is outlined to rapidly identify other candidates among correlated metals, and strategies are proposed to further enhance their performance, thereby opening up new avenues to develop transparent conductors.
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