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Tsunetomo, Naho; Iguchi, Shohei; Wierzbowska, Małgorzata; Ueda, Akiko; Won, Yousang; Heo, Sinae; Jeong, Yesul; Wakayama, Yutaka; Marumoto, Kazuhiro
Communications materials, 03/2021, Letnik: 2, Številka: 1Journal Article
Abstract Transition metal dichalcogenide MoS 2 is a two-dimensional material, attracting much attention for next-generation applications thanks to rich functionalities stemming from its crystal structure. Many experimental and theoretical works have focused on the spin-orbit interaction which couples the valley and spin degrees of freedom so that the spin-states can be electrically controllable. However, the spin-states of charge carriers and atomic vacancies in devices have not been yet elucidated directly from a microscopic viewpoint. Here, we report the spin-states in thin-film transistors using operando electron spin resonance spectroscopy. We have observed clearly different electron spin resonance signals of the conduction electrons and atomic vacancies, and distinguished the corresponding spin-states from the signals and theoretical calculations, evaluating the gate-voltage dependence and the spin-susceptibility and g -factor temperature dependence. This analysis gives deep insight into the MoS 2 magnetism and clearly indicates different spin-scattering mechanisms compared to graphene, which will be useful for improvements of the device characteristics and new applications.
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JCR | SNIP | JCR | SNIP | JCR | SNIP | JCR | SNIP |
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in: SICRIS
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