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Xue, HuiWen; He, QiMing; Jian, GuangZhong; Long, ShiBing; Pang, Tao; Liu, Ming
Nanoscale research letters, 09/2018, Letnik: 13, Številka: 1Journal Article
Gallium oxide (Ga 2 O 3 ) is a new semiconductor material which has the advantage of ultrawide bandgap, high breakdown electric field, and large Baliga’s figure of merit (BFOM), so it is a promising candidate for the next-generation high-power devices including Schottky barrier diode (SBD). In this paper, the basic physical properties of Ga 2 O 3 semiconductor have been analyzed. And the recent investigations on the Ga 2 O 3 -based SBD have been reviewed. Meanwhile, various methods for improving the performances including breakdown voltage and on-resistance have been summarized and compared. Finally, the prospect of Ga 2 O 3 -based SBD for power electronics application has been analyzed.
