The Schottky barrier for Al/ZnSe (O 0 1) junctions was determined in situ by X-ray photoemission spectroscopy following Al deposition on ZnSe (O 0 1) c(2 x2), ZnSe (O 0 1) 2 x 1, or ZnSe (O 0 1) 1 x ...1 surfaces fabricated by molecular beam epitaxy. While similar values of the barrier were found on the first two types of interfaces, the p-type Schottky barrier was 0.24 eV lower for the third type of interface.
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