Single-mode waveguides for GRAVITY Perraut, K.; Jocou, L.; Berger, J. P. ...
Astronomy and astrophysics (Berlin),
06/2018, Volume:
614
Journal Article
Peer reviewed
Open access
Context.
Within the framework of the second-generation instrumentation of the Very Large Telescope Interferometer of the European Southern Observatory we have developed the four-telescope beam ...combiner in integrated optics.
Aims.
We optimized the performance of such beam combiners, for the first time in the near-infrared
K
band, for the GRAVITY instrument dedicated to the study of the close environment of the galactic centre black hole by precision narrow-angle astrometry and interferometric imaging.
Methods.
We optimized the design of the integrated optics chip and the manufacturing technology as well, to fulfil the very demanding throughput specification. We also designed an integrated optics assembly able to operate at 200 K in the GRAVITY cryostat to reduce thermal emission.
Results.
We manufactured about 50 beam combiners by silica-on-silicon etching technology. We glued the best combiners to single-mode fluoride fibre arrays that inject the VLTI light into the integrated optics beam combiners. The final integrated optics assemblies have been fully characterized in the laboratory and through on-site calibrations: their global throughput over the
K
band is higher than 55% and the instrumental contrast reaches more than 95% in polarized light, which is well within the GRAVITY specifications.
Conclusions.
While integrated optics technology is known to be mature enough to provide efficient and reliable beam combiners for astronomical interferometry in the
H
band, we managed to successfully extend it to the longest wavelengths of the
K
band and to manufacture the most complex integrated optics beam combiner in this specific spectral band.
This work deals with the development of resistive memories based on oxides and their integration into the interconnection levels. The paper is focused on the screening of different dielectric oxides ...(metallic or not) showing resistive switching properties in order to lead to the highest performance resistive memories. Nickel oxide which is the most studied material in the literature is compared to other binary metallic oxides. In parallel, cells with silicon based dielectrics and Cu electrodes were developed. Electrical results allowed a comparison between the 3 main mechanisms observed in resistive memories based on oxides. Moreover, a specific resist flowing process and ion beam etching were optimized in order to limit metallic residues on memory cell side walls and prevent short-circuiting.
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