Silicon-oxide–nitride-oxide–silicon devices with nanoparticles (NPs) as charge trapping nodes (CTNs) are important to provide enhanced performance for nonvolatile memory devices. To study these ...topics, the TiO
x
N
y
metal oxide NPs embedded in the HfO
x
N
y
high-k dielectric as CTNs of the nonvolatile memory devices were investigated via the thermal synthesis using Ti thin-film oxidized in the mixed O
2/N
2 ambient. Well-isolated TiO
x
N
y
NPs with a diameter of 5–20
nm, a surface density of ∼3
×
10
11
cm
−2, and a charge trap density of around 2.33
×
10
12
cm
−2 were demonstrated. The writing characteristic measurements illustrate that the memory effect is mainly due to the
hole trapping.
This work compares Co
x
Mo
y
O, Co
x
Fe
y
O and Fe
x
Mo
y
O alloying metal oxide nanoparticles (AMONs) that were individually embedded in HfO
x
N
y
high-
k dielectric as charge trapping nodes. They ...were formed by chemical vapor deposition using Co/Mo, Co/Fe and Fe/Mo acetate, respectively, calcined and reduced in Ar/NH
3 ambient. The effects of various pre-treatments on Co
x
Mo
y
O, Co
x
Fe
y
O and Fe
x
Mo
y
O AMONs preparation were investigated. The results indicate that the larger charge trap density, larger memory window and better programming characteristics of Co
x
Mo
y
O AMONs are attributable to their higher surface density and smaller diameter. The average collected charge in each Co
x
Mo
y
O AMON is the smallest among three AMONs, revealing that a local leakage path is associated with the least charge loss. The main mechanism that governs the programming characteristics involves the trapping of holes.
CuInGaSe 2 (CIGS) thin-film has successfully grown at low temperature 400°C for bifacial solar cells and TFTs without degrading the silicon solar cell on the other side. The efficiency of CIGS solar ...cells reached 6.3% and 11% at 400 and 500°C, respectively, by sodium-free and Cd-free (n-type ZnS buffer layer used) green technologies. Texturing technique has been introduced here on Si not only to relieve the sodium-free impact on CIGS-crystallization but also to enhance the adhesion between CIGS solar cells and underneath substrate. CIGS TFTs are reported first time and revealed a record-high hole-mobility of 0.22 cm 2 /V-s. Hybrid CIGS solar cells/TFTs are uniformly formed on 6" wafers, simultaneously powered with silicon solar cells.
This study report the silicon quantum dots that precipitate from silicon rich nitride films by thermal annealed. We examined various annealing conditions on silicon rich nitride films that deposited ...in the same PECVD deposition program. We could find the sample that went through high annealed temperature and sufficient annealed time, such as annealed at 1000°C for 1 hour, would get better dots size at about 5 nm.
The Co
x
Ni
y
O hybrid metal oxide nanoparticles (HMONs) embedded in the HfO
x
N
y
high-k dielectric as charge trapping nodes of the nonvolatile memory devices have been formed via the chemical vapor ...deposition using the Co/Ni acetate calcined and reduced in the Ar/NH
3 ambient. A charge trap density of 8.96
×
10
11
cm
−2 and a flatband voltage shift of 500
mV were estimated by the appearance of the hysteresis in the capacitance–voltage (C–V) measurements during the ±5
V sweep. Scanning electron microscopy image displays that the Co
x
Ni
y
O HMONs with a diameter of ∼10–20
nm and a surface density of ∼1
×
10
10
cm
−2 were obtained. The mechanism related to the writing characteristics are mainly resulted from the holes trapping. Compared with those devices with the Co
x
Ni
y
O HMONs formed by the dip-coated technique, memory devices with the Co
x
Ni
y
O HMONs fabricated by the drop-coated technique show improved surface properties between the Co
x
Ni
y
O HMONs and the HfON as well as electrical characteristics.
For the development of third generation Si solar cell with high conversion efficiency over 15% and low manufacturing cost, four thin film nanotechnologies have been proposed, including a photovoltaic ...material system of Si x Ge 1-x -Si-Si y C 1-y with multiple bandgaps, a very dense array of Si-based quantum-dots with UV-to-NIR opto-electronic response, surface plasmonic metal nano-particles with light trapping effect, and ZnO nanowires with anti-reflection function.
For the first time, we report a novel self-powered TFT panel (30×40cm 2 ) by integration of sputtering/non-toxic Se vapor selenization copper-indium-gallium-selenide (CIGS) solar cell (conversion ...efficiency of 8%) and high electron-mobility (172 cm 2 /V-s) micro-crystalline (μc)-Si TFTs.
This study presents a novel selective growth method to pattern the high purity and single-walled carbon nanotubes (SWNTs) network by alcohol catalytic chemical vapor deposition (ACCVD). A hydrophilic ...surface with a contact angle of 44.22deg or even lower can disperse the Co-Mo catalysts easily and uniformly. Therefore, the SWNTs networks can be only formed and grown on the surface of SiO 2 layer after a highly hydrophilic surface treatment. This novel method can be applied in the process of SWNTs electronics devices such as nanosensors or transistors. Finally, a SWNTs networks field effect transistor was also fabricated and demonstrated.
Well aligned Si nanowires (SiNWs) by Vapor-Liquid-Solid growth process are presented. Instead of using H 2 , the current work uses N 2 as carrier gas. The growth conditions of SiNWs are controlled by ...the ratio of nitrogen versus silane gas. Tapering of nanowires was found at T=620degC and P=333 m torr, and the tapering parameter was reduced by increasing the N 2 gas. Tapering of nanowires is attributed to volume reduction of Au catalyst which diffuses onto the side wall of nanowires. However, it is found that the N 2 gas has a similar effect of O 2 gas which can reduce diffusion of Au catalyst so that volume reduction of Au catalyst is not so significant and nanowire growth becomes untapered. By adopting reflow of photoresist techniques, the size of metal catalyst for SiNWs growth can be significantly reduced, and the growth location of SiNWs can be defined. Well aligned Si nanowires can be obtained. However, aspect ratio of the nano size hole in the photoresist after reflow has a significant effect on the amount of the Au in the nanoparticles and thus the quality and growth of the nanowires.
Record fabrication temperature, 100°C, of a single junction amorphous Si solar cell was demonstrated by a high-density plasma method. Present solar cell revealed conversion efficiency of 7.4% at ...200°C (4.1% at 135°C).
